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2N6110

Description
7A, 30V, PNP, Si, POWER TRANSISTOR, TO-213AA
CategoryDiscrete semiconductor    The transistor   
File Size483KB,9 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
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2N6110 Overview

7A, 30V, PNP, Si, POWER TRANSISTOR, TO-213AA

2N6110 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Reach Compliance Code_compli
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)7 A
Collector-based maximum capacity250 pF
Collector-emitter maximum voltage30 V
ConfigurationSINGLE
Minimum DC current gain (hFE)2.3
JEDEC-95 codeTO-213AA
JESD-30 codeO-MBFM-P2
JESD-609 codee0
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Package body materialMETAL
Package shapeROUND
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power consumption environment40 W
Maximum power dissipation(Abs)40 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formPIN/PEG
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)10 MHz
VCEsat-Max3.5 V
Base Number Matches1

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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