Power Bipolar Transistor, 10A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, TO-218, Plastic/Epoxy, 3 Pin
Parameter Name | Attribute value |
Objectid | 1417094973 |
package instruction | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code | unknown |
ECCN code | EAR99 |
Other features | HIGH RELIABILITY |
Maximum collector current (IC) | 10 A |
Collector-emitter maximum voltage | 500 V |
Configuration | SINGLE |
Minimum DC current gain (hFE) | 30 |
JEDEC-95 code | TO-218 |
JESD-30 code | R-PSFM-T3 |
Number of components | 1 |
Number of terminals | 3 |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | FLANGE MOUNT |
Polarity/channel type | NPN |
Maximum power consumption environment | 90 W |
Certification status | Not Qualified |
surface mount | NO |
Terminal form | THROUGH-HOLE |
Terminal location | SINGLE |
transistor applications | SWITCHING |
Transistor component materials | SILICON |
Nominal transition frequency (fT) | 18 MHz |