Silicon NPN epitaxial planar transistor
| Parameter Name | Attribute value |
| Is it Rohs certified? | conform to |
| Parts packaging code | SC-59 |
| package instruction | SMALL OUTLINE, R-PDSO-G3 |
| Contacts | 3 |
| Reach Compliance Code | unknow |
| ECCN code | EAR99 |
| Other features | BUILT IN BIAS RESISTOR RATIO IS 2.13 |
| Maximum collector current (IC) | 0.1 A |
| Collector-emitter maximum voltage | 50 V |
| Configuration | SINGLE WITH BUILT-IN RESISTOR |
| Minimum DC current gain (hFE) | 160 |
| JESD-30 code | R-PDSO-G3 |
| JESD-609 code | e6 |
| Humidity sensitivity level | 1 |
| Number of components | 1 |
| Number of terminals | 3 |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | NPN |
| Maximum power dissipation(Abs) | 0.2 W |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal surface | Tin/Bismuth (Sn/Bi) |
| Terminal form | GULL WING |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 150 MHz |
| Base Number Matches | 1 |
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