ATF-501P8-BLKG datasheet, PDF - EEWORLD Datasheet

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ATF-501P8-BLKG: DescriptionRF Small Signal Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, High Electron Mobility FET, MO-229, 2 X 2 MM, 0.75 MM HEIGHT, LEAD FREE, LPCC-8; CategoryDiscrete semiconductor The transistor; File Size184KB，22 Pages; ManufacturerHP（Keysight）; Websitehttp://www.semiconductor.agilent.com/

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ATF-501P8-BLKG Overview

RF Small Signal Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, High Electron Mobility FET, MO-229, 2 X 2 MM, 0.75 MM HEIGHT, LEAD FREE, LPCC-8

ATF-501P8-BLKG Parametric

Parameter Name	Attribute value
Maker	HP（Keysight）
Parts packaging code	SON
package instruction	SMALL OUTLINE, S-PDSO-N8
Contacts	8
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	LOW NOISE
Shell connection	SOURCE
Configuration	SINGLE
Minimum drain-source breakdown voltage	7 V
Maximum drain current (ID)	1 A
FET technology	HIGH ELECTRON MOBILITY
highest frequency band	S BAND
JEDEC-95 code	MO-229
JESD-30 code	S-PDSO-N8
Number of components	1
Number of terminals	8
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	SQUARE
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
Minimum power gain (Gp)	13.5 dB
Certification status	Not Qualified
surface mount	YES
Terminal form	NO LEAD
Terminal location	DUAL
transistor applications	AMPLIFIER
Transistor component materials	SILICON

ATF-501P8-BLKG Related Products

	ATF-501P8-BLKG	ATF-501P8-TR2G	ATF-501P8-TR1G
Description	RF Small Signal Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, High Electron Mobility FET, MO-229, 2 X 2 MM, 0.75 MM HEIGHT, LEAD FREE, LPCC-8	RF Small Signal Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, High Electron Mobility FET, MO-229, 2 X 2 MM, 0.75 MM HEIGHT, LEAD FREE, LPCC-8	RF Small Signal Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, High Electron Mobility FET, MO-229, 2 X 2 MM, 0.75 MM HEIGHT, LEAD FREE, LPCC-8
Maker	HP（Keysight）	HP（Keysight）	HP（Keysight）
Parts packaging code	SON	SON	SON
package instruction	SMALL OUTLINE, S-PDSO-N8	SMALL OUTLINE, S-PDSO-N8	SMALL OUTLINE, S-PDSO-N8
Contacts	8	8	8
Reach Compliance Code	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99
Other features	LOW NOISE	LOW NOISE	LOW NOISE
Shell connection	SOURCE	SOURCE	SOURCE
Configuration	SINGLE	SINGLE	SINGLE
Minimum drain-source breakdown voltage	7 V	7 V	7 V
Maximum drain current (ID)	1 A	1 A	1 A
FET technology	HIGH ELECTRON MOBILITY	HIGH ELECTRON MOBILITY	HIGH ELECTRON MOBILITY
highest frequency band	S BAND	S BAND	S BAND
JEDEC-95 code	MO-229	MO-229	MO-229
JESD-30 code	S-PDSO-N8	S-PDSO-N8	S-PDSO-N8
Number of components	1	1	1
Number of terminals	8	8	8
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	SQUARE	SQUARE	SQUARE
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL
Minimum power gain (Gp)	13.5 dB	13.5 dB	13.5 dB
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES
Terminal form	NO LEAD	NO LEAD	NO LEAD
Terminal location	DUAL	DUAL	DUAL
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON

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