PMV65XPEA
27 November 2014
SO
T2
3
20 V, P-channel Trench MOSFET
Product data sheet
1. General description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23
(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
2. Features and benefits
•
•
•
•
•
Trench MOSFET technology
Very fast switching
Enhanced power dissipation capability: P
tot
= 890 mW
ElectroStatic Discharge (ESD) protection 2 kV HBM
AEC-Q101 qualified
3. Applications
•
•
•
•
Relay driver
High speed line driver
High-side loadswitch
Switching circuits
4. Quick reference data
Table 1.
Symbol
V
DS
V
GS
I
D
R
DSon
Quick reference data
Parameter
drain-source voltage
gate-source voltage
drain current
V
GS
= -4.5 V; T
amb
= 25 °C; t ≤ 5 s
V
GS
= -4.5 V; I
D
= -2.8 A; T
j
= 25 °C
[1]
Conditions
T
j
= 25 °C
Min
-
-12
-
Typ
-
-
-
Max
-20
12
-3.3
Unit
V
V
A
Static characteristics
drain-source on-state
resistance
[1]
2
-
67
78
mΩ
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm .
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NXP Semiconductors
PMV65XPEA
20 V, P-channel Trench MOSFET
5. Pinning information
Table 2.
Pin
1
2
3
Pinning information
Symbol Description
G
S
D
gate
source
drain
1
2
S
017aaa259
Simplified outline
3
Graphic symbol
D
G
TO-236AB (SOT23)
6. Ordering information
Table 3.
Ordering information
Package
Name
PMV65XPEA
TO-236AB
Description
plastic surface-mounted package; 3 leads
Version
SOT23
Type number
7. Marking
Table 4.
Marking codes
Marking code
[1]
Type number
PMV65XPEA
[1]
DN%
% = placeholder for manufacturing site code
PMV65XPEA
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
27 November 2014
2 / 16
NXP Semiconductors
PMV65XPEA
20 V, P-channel Trench MOSFET
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
I
D
Parameter
drain-source voltage
gate-source voltage
drain current
V
GS
= -4.5 V; T
amb
= 25 °C; t ≤ 5 s
V
GS
= -4.5 V; T
amb
= 25 °C
V
GS
= -4.5 V; T
amb
= 100 °C
I
DM
E
DS(AL)S
P
tot
peak drain current
non-repetitive drain-source
avalanche energy
total power dissipation
T
amb
= 25 °C; single pulse; t
p
≤ 10 µs
T
j(init)
= 25 °C; I
D
= -0.52 A; DUT in
avalanche (unclamped)
T
amb
= 25 °C
T
sp
= 25 °C
T
j
T
amb
T
stg
I
S
V
ESD
junction temperature
ambient temperature
storage temperature
[2]
[1]
[1]
[1]
[1]
Conditions
T
j
= 25 °C
Min
-
-12
-
-
-
-
-
-
-
-
-55
-55
-65
Max
-20
12
-3.3
-2.8
-1.8
-12
5.4
480
890
6250
150
150
150
Unit
V
V
A
A
A
A
mJ
mW
mW
mW
°C
°C
°C
Source-drain diode
source current
T
amb
= 25 °C
HBM
[1]
-
-0.9
A
ESD maximum rating
electrostatic discharge voltage
[1]
[2]
[3]
[3]
-
2000
V
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm .
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Measured between all pins.
2
PMV65XPEA
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
27 November 2014
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NXP Semiconductors
PMV65XPEA
20 V, P-channel Trench MOSFET
120
P
der
(%)
80
017aaa123
120
I
der
(%)
80
017aaa124
40
40
0
- 75
- 25
25
75
125
T
j
(°C)
175
0
- 75
- 25
25
75
125
T
j
(°C)
175
Fig. 1.
Normalized total power dissipation as a
function of junction temperature
Fig. 2.
Normalized continuous drain current as a
function of junction temperature
-10
2
I
D
(A)
-10
Limit R
DSon
= V
DS
/I
D
t
p
= 10 µs
t
p
= 100 µs
t
p
= 1 ms
t
p
= 10 ms
-10
-1
DC; T
sp
= 25 °C
DC; T
amb
= 25 °C;
drain mounting pad 6 cm
2
-10
-2
-10
-1
t
p
= 100 ms
aaa-012866
-1
-1
-10
V
DS
(V)
-10
2
I
DM
= single pulse
Fig. 3.
Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-
source voltage
PMV65XPEA
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
27 November 2014
4 / 16
NXP Semiconductors
PMV65XPEA
20 V, P-channel Trench MOSFET
9. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
ambient
thermal resistance
from junction to solder
point
[1]
[2]
10
3
Z
th(j-a)
(K/W)
10
2
Conditions
in free air
in free air; t ≤ 5 s
[1]
[2]
[2]
Min
-
-
-
-
Typ
230
120
85
15
Max
260
140
100
20
Unit
K/W
K/W
K/W
K/W
R
th(j-sp)
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm .
aaa-011994
2
duty cycle = 1
0.50
0.25
0.10
0.75
0.33
0.20
0.05
10
0.02
0.01
0
1
10
-3
10
-2
10
-1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, standard footprint
Fig. 4.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMV65XPEA
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
27 November 2014
5 / 16
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