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2N5783TIN/LEAD

Description
Small Signal Bipolar Transistor, 3.5A I(C), PNP,
CategoryDiscrete semiconductor    The transistor   
File Size489KB,2 Pages
ManufacturerCentral Semiconductor
Download Datasheet Parametric Compare View All

2N5783TIN/LEAD Overview

Small Signal Bipolar Transistor, 3.5A I(C), PNP,

2N5783TIN/LEAD Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Reach Compliance Code_compli
Maximum collector current (IC)3.5 A
ConfigurationSingle
Minimum DC current gain (hFE)20
JESD-609 codee0
Maximum operating temperature200 °C
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power dissipation(Abs)10 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Maximum time at peak reflow temperatureNOT SPECIFIED
Nominal transition frequency (fT)8 MHz
Base Number Matches1
2N5783 PNP
2N5786 NPN
COMPLEMENTARY SILICON
POWER TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N5783 and
2N5786 types are Complementary Silicon Power
Transistors designed for general purpose switching and
amplifier applications.
MARKING: FULL PART NUMBER
TO-39 CASE
MAXIMUM RATINGS:
(TC=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Continuous Base Current
Power Dissipation
Power Dissipation (TA=25°C)
Operating and Storage Junction Temperature
Thermal Resistance
Thermal Resistance
SYMBOL
VCBO
VCER
VCEO
VEBO
IC
IB
PD
PD
TJ, Tstg
Θ
JC
Θ
JA
45
45
40
3.5
3.5
1.0
10
1.0
-65 to +200
17.5
175
MAX
10
1.0
10
1.0
100
10
UNITS
V
V
V
V
A
A
W
W
°C
°C/W
°C/W
UNITS
μA
mA
μA
mA
μA
μA
V
V
V
V
V
ELECTRICAL CHARACTERISTICS:
(TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
ICEV
VCE=45V, VBE=1.5V
ICEV
VCE=45V, VBE=1.5V, TC=150°C
ICER
VCE=40V, RBE=100Ω
ICER
VCE=40V, RBE=100Ω, TC=150°C
ICEO
VCE=25V
IEBO
VEB=3.5V
BVCER
IC=10mA, RBE=100Ω
45
BVCEO
IC=10mA
40
VCE(SAT)
IC=1.6A, IB=160mA
VCE(SAT)
IC=3.2A, IB=800mA
VBE(ON)
VCE=2.0V, IC=1.6A
VCE=2.0V, IC=1.6A
20
hFE
hFE
VCE=2.0V, IC=3.2A
4.0
fT
VCE=2.0V, IC=100mA, f=4.0MHz (2N5783)
8.0
fT
VCE=2.0V, IC=100mA, f=200kHz (2N5786)
1.0
hfe
VCE=2.0V, IC=100mA, f=1.0kHz
25
ton
VCC=30V, IC=1.0A, IB1=IB2=100mA (2N5783)
ton
VCC=30V, IC=1.0A, IB1=IB2=100mA (2N5786)
toff
VCC=30V, IC=1.0A, IB1=IB2=100mA (2N5783)
toff
VCC=30V, IC=1.0A, IB1=IB2=100mA (2N5786)
1.0
2.0
1.5
150
60
4.0
0.5
5.0
2.5
15
MHz
MHz
μs
μs
μs
μs
R1 (21-September 2011)

2N5783TIN/LEAD Related Products

2N5783TIN/LEAD 2N5786LEADFREE 2N5783LEADFREE 2N5786TIN/LEAD
Description Small Signal Bipolar Transistor, 3.5A I(C), PNP, Small Signal Bipolar Transistor, 3.5A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, TO-39, 3 PIN Small Signal Bipolar Transistor, 3.5A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, TO-39, 3 PIN Small Signal Bipolar Transistor, 3.5A I(C), NPN,
Is it Rohs certified? incompatible conform to conform to incompatible
Reach Compliance Code _compli compli compli not_compliant
Maximum collector current (IC) 3.5 A 3.5 A 3.5 A 3.5 A
Configuration Single SINGLE SINGLE Single
Minimum DC current gain (hFE) 20 4 4 20
JESD-609 code e0 e3 e3 e0
Peak Reflow Temperature (Celsius) NOT SPECIFIED 260 260 NOT SPECIFIED
Polarity/channel type PNP NPN PNP NPN
surface mount NO NO NO NO
Terminal surface Tin/Lead (Sn/Pb) Matte Tin (Sn) Matte Tin (Sn) Tin/Lead (Sn/Pb)
Maximum time at peak reflow temperature NOT SPECIFIED 10 10 NOT SPECIFIED
Nominal transition frequency (fT) 8 MHz 1 MHz 8 MHz 1 MHz
Base Number Matches 1 1 1 1

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