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SMBJ48A

Description
600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
Categorysemiconductor    Discrete semiconductor   
File Size92KB,6 Pages
ManufacturerSEMITECH
Websitehttp://www.semitech.cn
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SMBJ48A Overview

600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA

SMBJ48A Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Maximum breakdown voltage58.9 V
Minimum breakdown voltage53.3 V
Processing package descriptionHALOGEN FREE, SMBJ, 2 PIN
Lead-freeYes
EU RoHS regulationsYes
China RoHS regulationsYes
stateACTIVE
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE
surface mountYes
Terminal formC BEND
terminal coatingNOT SPECIFIED
Terminal locationDUAL
Packaging MaterialsPLASTIC/EPOXY
CraftsmanshipAVALANCHE
structureSINGLE
Diode component materialsSILICON
Maximum power consumption limit5 W
polarityUNIDIRECTIONAL
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
shutdown voltage48 V
Maximum non-repetitive peak speed power600 W
SHANGHAI SEMITECH SEMICONDUCTOR CO., LTD
Email:sales@semitech.cn
Tel:+86-21-64605419
Fax:+86-21-64606443
SMBJ5.0 --- SMBJ440CA
600W Surface Mount
Transient Voltage
Suppressors
Features
Working peak reverse voltage range – 5.0V to 440V.
Peak power dissipation 600W @10 x 1000 us Pulse
Low profile package.
Excellent clamping capability.
Glass passivated junction.
Fast response time: typically less than 1 ns for Uni-direction.
Less than 5 ns for Bi-direction, from 0 Volts to BV min
Typical IR less than 1uA above 10V.
Plastic material has UL flammability classification 94V-O
RoHS compliant in lead-free versions
Mechanical Characteristics
CASE: Void-free, JEDEC DO-214AA Molded Plastic over glass passivated junction..
Mounting Position: Any
Polarity: by cathode band denotes uni-directional device, none cathode band denotes bi-directional device.
Terminal: Solder plated, solderable per MIL-STD-750, Method 2026
Maximum Ratings And Characteristics
@ 25°C Ambient Temperature (unless otherwise noted)
Parameter
Symbol
Value
Units
Peak Pulse Power Dissipation on 10/1000 us Waveform (Note 1, 2, FIG.1)
Peak Pulse Current of on 10/1000us Waveform (Note 1, FIG.3)
Peak Forward Surge Current, 8.3ms Single Half Sine-wave Superimposed on
Rated Load, (JEDEC Method) (Note 2. 3)
Operating Junction Temperature Range
Storage Temperature Range
Notes:
P
PPM
I
PPM
I
FSM
T
J
T
STG
Min 600
See Table 1
100
-55 to 150
-55 to 150
W
Amps
Amps
°C
°C
1.
Non-repetitive current pulse, per Fig.3 and derated above T
A
=25°C per Fig.2.
2.
Mounted on 5.0mm
2
(0.03mm thick) Copper Pads to each terminal.
3.
8.3 ms single half sine-wave, or equivalent square wave, Duty cycle=4 pluses per minute maximum.
WWW.SEMITECH.CN

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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