SXVVN0109N9 datasheet, PDF - EEWORLD Datasheet

SXVVN0109N9: DescriptionSmall Signal Field-Effect Transistor, 0.5A I(D), 90V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-52; CategoryDiscrete semiconductor The transistor; File Size131KB，4 Pages; ManufacturerSupertex

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SXVVN0109N9 Overview

Small Signal Field-Effect Transistor, 0.5A I(D), 90V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-52

Parameter Name	Attribute value
Maker	Supertex
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	90 V
Maximum drain current (ID)	0.5 A
Maximum drain-source on-resistance	3 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	8 pF
JEDEC-95 code	TO-52
JESD-30 code	O-MBCY-W3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	1 W
Certification status	Not Qualified
surface mount	NO
Terminal form	WIRE
Terminal location	BOTTOM
transistor applications	SWITCHING
Transistor component materials	SILICON

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