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MBR10150F_T0_10001

Description
Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 150V V(RRM), Silicon, TO-220AC, ITO-220AC, 3/2 PIN
CategoryDiscrete semiconductor    diode   
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/
Environmental Compliance

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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MBR10150F_T0_10001 Overview

Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 150V V(RRM), Silicon, TO-220AC, ITO-220AC, 3/2 PIN

MBR10150F_T0_10001 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPANJIT
package instructionITO-220AC, 3/2 PIN
Reach Compliance Codenot_compliant
ECCN codeEAR99
Other featuresFREE WHEELING DIODE, LOW POWER LOSS
applicationEFFICIENCY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.9 V
JEDEC-95 codeTO-220AC
JESD-30 codeR-PSFM-T2
Maximum non-repetitive peak forward current150 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Maximum output current10 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage150 V
Maximum reverse current50 µA
surface mountNO
technologySCHOTTKY
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED

MBR10150F_T0_10001 Preview

Download Datasheet
MBR1040F~MBR10200F
10 AMPERES SCHOTTKY BARRIER RECTIFIERS
VOLTAGE
40 to 200 Volts
CURRENT
10 Amperes
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O.
Flame Retardant Epoxy Molding Compound.
• Metal silicon junction, majority carrier conduction
• Low power loss, high efficiency.
• High current capability
• Guardring for overvlotage protection
• For use in low voltage,high frequency inverters
free wheeling , and polarlity protection applications.
• Lead free in comply with EU RoHS 2011/65/EU directives
MECHANICALDATA
• Case: ITO-220AC molded plastic
• Terminals: solder plated, solderable per MIL-STD-750, Method 2026
• Polarity: As marked.
• Mounting Position: Any
• Weight: 0.055 ounces, 1.5615 grams.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PA RA M E TE R
M a xi m um R e c ur r e nt P e a k R e ve r s e V o l t a g e
M a xi m um R M S V o l t a g e
M a xi m um D C B l o c k i ng V o l t a g e
M a xi m um A ve r a g e F o r w a r d C ur r e nt ( S e e
fi g .1 )
P e a k F o r w a r d S ur g e C ur r e nt : 8 . 3 m s s i ng l e
ha l f s i ne - w a ve s up e r i m p o s e d o n r a t e d
l o a d ( J E D E C m e t ho d )
M a xi m um F o r w a r d V o l t a g e a t 1 0 A , p e r l e g
M a xi m um D C R e ve r s e C ur r e nt T
J
= 2 5
O
C
a t R a t e d D C B l o c k i ng V o l t a g e T
J
= 1 2 5
O
C
Ty p i c a l T h e r m a l R e s i s t a n c e
O p e r a t i ng a nd S t o r a g e J unc t i o n
Te m p e r a t u r e R a n g e
S YM B O L
V
RRM
V
RMS
V
DC
I
F (AV )
I
F S M
V
F
I
R
R
θ
J C
T
J
, T
S TG
MB R1 0 4 0 F
MB R1 0 4 5 F MB R1 0 5 0 F MB R1 0 6 0 F MB R1 0 8 0 F MB R1 0 9 0 F MB R1 0 1 0 0 F MB R1 0 1 5 0 F MB R1 0 2 0 0 F
U N IT S
V
V
V
A
A
40
28
40
45
3 1 .5
45
50
35
50
60
42
60
80
56
80
10
150
90
63
90
100
70
100
150
105
150
200
140
200
0 .7
0 .7 5
0 .0 5
20
3 .0
0 .8
0.9
V
mA
O
C /
W
C
-5 5 to + 1 5 0
-6 5 to + 1 7 5
O
Notes :
Both Bonding and Chip structure are available.
STAD-APR.30.2009
PAGE . 1
Ended: The 2nd Infineon Silicon Carbide Application Technology Development Forum
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