VN3205
N-Channel Enhancement-Mode
Vertical DMOS FETs
Ordering Information
BV
DSS
/
BV
DGS
50V
†
R
DS(ON)
(max)
0.3Ω
V
GS(th)
(max)
2.4V
TO-92
VN3205N3
Order Number / Package
14-Pin P-DIP
VN3205N6
TO-243AA*
VN3205N8
Die
†
VN3205ND
* Same as SOT-89. Product supplied on 2000 piece carrier tape reels.
MIL visual screening available
Product marking for TO-243AA:
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient
inherent in MOS devices. Characteristic of all MOS structures,
these devices are free from thermal runaway and thermally-
induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
VN2L❋
Where
❋
= 2-week alpha date code
Features
❏
Free from secondary breakdown
❏
Low power drive requirement
❏
Ease of paralleling
❏
Low C
ISS
and fast switching speeds
❏
Excellent thermal stability
❏
Integral Source-Drain diode
❏
High input impedance and high gain
❏
Complementary N- and P-channel devices
Package Options
D
1
G
1
S
1
NC
S
2
G
2
D
2
1
2
3
4
5
6
7
14
13
12
11
10
9
8
Applications
❏
Motor controls
❏
Converters
❏
Amplifiers
❏
Switches
❏
Power supply circuits
❏
Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
D
4
G
4
S
4
NC
S
3
G
3
D
3
Absolute Maximum Ratings
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
Soldering Temperature*
* Distance of 1.6 mm from case for 10 seconds.
top view
BV
DSS
BV
DGS
±
20V
14-pin DIP
G
D
S
SGD
D
-55°C to +150°C
300°C
TO-92
TO-243AA
(SOT-89)
Note: See Package Outline section for dimensions.
11/12/01
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
1
VN3205
Thermal Characteristics
Package
TO-92
SOT-89
Plastic DIP
†
‡
I
D
(continuous)*
1.2A
1.5A
1.5A
I
D
(pulsed)
8.0A
8.0A
8.0A
Power Dissipation
@ T
C
= 25
°
C
1.0W
1.6W (T
A
= 25°C)
3.0W
‡
θ
jc
°
C/W
125
15
41.6
‡
θ
ja
°
C/W
170
78
†
83.3
‡
I
DR
*
1.2A
1.5A
1.5A
I
DRM
8.0A
8.0A
8.0A
*
I
D
(continuous) is limited by max rated T
j
.
T
A
= 25°C.
Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant P
D
increase possible on ceramic substrate.
Total for package.
Electrical Characteristics
(@ 25°C unless otherwise specified)
Symbol
BV
DSS
V
GS(th)
∆V
GS(th)
I
GSS
I
DSS
Parameter
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Change in V
GS(th)
with Temperature
Gate Body Leakage
Zero Gate Voltage Drain Current
Min
50
0.8
-4.3
1
2.4
-5.5
100
10
1
I
D(ON)
R
DS(ON)
ON-State Drain Current
Static Drain-to-Source
ON-State Resistance
TO-92 and P-DIP
SOT-89
TO-92 and P-DIP
SOT-89
∆R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Change in R
DS(ON)
with Temperature
Forward Transconductance
Input Capacitance
Common Source Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage Drop
Reverse Recovery Time
300
1.0
0.85
1.5
220
70
20
300
120
30
10
15
25
25
1.6
V
ns
V
GS
= 0V, I
SD
= 1.5A
V
GS
= 0V, I
SD
= 1A
ns
V
DD
= 25V
I
D
= 2A
R
GEN
= 10Ω
pF
V
GS
= 0V, V
DS
= 25V
f = 1 MHz
3.0
14
0.45
0.45
0.3
0.3
1.2
Typ
Max
Unit
V
V
mV/°C
nA
µA
mA
A
Ω
Ω
Ω
Ω
%/°C
Conditions
V
GS
= 0V, I
D
= 10mA
V
GS
= V
DS
, I
D
= 10mA
V
GS
= V
DS
, I
D
= 10mA
V
GS
=
±20V,
V
DS
= 0V
V
GS
= 0V, V
DS
= Max Rating
V
GS
= 0V, V
DS
= 0.8 Max Rating
T
A
= 125°C
V
GS
= 10V, V
DS
= 5V
V
GS
= 4.5V, I
D
= 1.5A
V
GS
= 4.5V, I
D
= 0.75A
V
GS
= 10V, I
D
= 3A
V
GS
= 10V, I
D
= 1.5A
V
GS
= 10V, I
D
= 3A
V
DS
= 25V, I
D
= 2A
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
V
DD
Switching Waveforms and Test Circuit
10V
90%
INPUT
0V
PULSE
GENERATOR
R
gen
10%
t
(ON)
t
(OFF)
t
r
t
d(OFF)
t
F
t
d(ON)
V
DD
10%
10%
INPUT
OUTPUT
0V
90%
90%
2
Ω
R
L
OUTPUT
D.U.T.
VN3205
Typical Performance Curves
Output Characteristics
20
20
Saturation Characteristics
V
GS
=
16
10V
V
GS
=
16
10V
I
D
(amperes)
I
D
(amperes)
12
8V
12
8V
8
6V
8
6V
4
4
4V
3V
0
0
10
20
30
40
50
0
0
2
4
6
8
10
4V
3V
V
DS
(volts)
Transconductance vs. Drain Current
5
2.0
V
DS
(volts)
Power Dissipation vs. Temperature
4
V
DS
= 25V
1.6
TO-243AA (T A = 25°C)
P-DIP
G
FS
(siemens)
T
A
= -55°C
2
25°C
125°C
P
D
(watts)
3
1.2
0.8
TO-92
1
0.4
0
0
2
4
6
8
10
0
0
25
50
75
100
125
150
I
D
(amperes)
Maximum Rated Safe Operating Area
10
TO-92 (pulsed)
P-DIP (pulsed)
1.0
TO-243AA
(pulsed)
T
C
(°C)
Thermal Response Characteristics
Thermal Resistance (normalized)
0.8
I
D
(amperes)
1.0
TO-243AA (DC)
TO-92 (DC)
P-DIP (DC)
0.1
0.6
TO-243AA
T
A
= 25°C
P
D
= 1.6W
0.4
T
C
= 25°C
.01
0
1
10
100
0.2
TO-92
P
D
= 1W
T
C
= 25°C
0.01
0.1
1.0
10
0
0.001
V
DS
(volts)
t
p
(seconds)
3
VN3205
Typical Performance Curves
BV
DSS
Variation with Temperature
1.1
1.0
On-Resistance vs. Drain Current
0.8
V
GS
= 4.5V
BV
DSS
(normalized)
R
DS(ON)
(ohms)
0.6
V
GS
= 10V
1.0
0.4
0.2
0.9
-50
0
50
100
150
0
0
4
8
12
16
20
T
j
(
°
C)
Transfer Characteristics
10
I
D
(amperes)
V
GS(th)
and R
DS(ON)
Variation with Temperature
1.2
1.6
V
DS
= 25V
8
1.1
R
DS(ON)
@ 10V, 3A
1.4
25°C
6
1.0
1.2
125°C
4
0.9
1.0
2
0.8
V
GS(th)
@ 1mA
0.8
0
0
2
4
6
8
10
0.7
-50
0
50
100
150
0.6
V
GS
(volts)
Capacitance vs. Drain-to-Source Voltage
400
10
T
j
(°C)
Gate Drive Dynamic Characteristics
f = 1MHz
8
300
V
DS
= 10V
C (picofarads)
V
GS
(volts)
V
DS
= 40V
6
C
ISS
200
325 pF
4
100
C
OSS
C
RSS
0
0
10
20
30
40
2
215 pF
0
0
1
2
3
4
5
V
DS
(volts)
Q
G
(nanocoulombs)
11/12/01
©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
4
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 • FAX: (408) 222-4895
www.supertex.com
R
DS(ON)
(normalized)
V
GS(th)
(normalized)
T
A
= -55°C
I
D
(amperes)
DSP and ARM Processors
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