3N65AG-TN3-T datasheet, PDF - EEWORLD Datasheet

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3N65AG-TN3-T: DescriptionPower Field-Effect Transistor, 3A I(D), 650V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN FREE PACKAGE-3; CategoryDiscrete semiconductor The transistor; File Size358KB，8 Pages; ManufacturerUNISONIC TECHNOLOGIES CO.,LTD; Websitehttp://www.unisonic.com.tw/; Environmental Compliance

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3N65AG-TN3-T Overview

Power Field-Effect Transistor, 3A I(D), 650V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN FREE PACKAGE-3

3N65AG-TN3-T Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	UNISONIC TECHNOLOGIES CO.,LTD
Parts packaging code	TO-252
package instruction	SMALL OUTLINE, R-PSSO-G2
Contacts	4
Reach Compliance Code	compliant
Avalanche Energy Efficiency Rating (Eas)	200 mJ
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	650 V
Maximum drain current (ID)	3 A
Maximum drain-source on-resistance	3.6 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-252
JESD-30 code	R-PSSO-G2
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	12 A
surface mount	YES
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

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UNISONIC TECHNOLOGIES CO., LTD

3N65A

3A, 650V N-CHANNEL

POWER MOSFET

DESCRIPTION

The UTC

3N65A

is a high voltage and high current power

MOSFET designed to have better characteristics, such as fast

switching time, low gate charge, low on-state resistance and high

rugged avalanche characteristics. This power MOSFET is usually

used in the high speed switching applications in power supplies,

PWM motor controls, high efficient DC to DC converters and bridge

circuits.

Power MOSFET

FEATURES

* V

= 650V, I

= 3A

* R

DS(ON)

= 3.6Ω @V

= 10 V

* Ultra low gate charge ( typical 10 nC )

* Low reverse transfer capacitance ( C

RSS

= typical 5.5 pF )

* Fast switching capability

* Avalanche energy specified

* Improved dv/dt capability, high ruggedness

SYMBOL

2.Drain

1.Gate

3.Source

ORDERING INFORMATION

Ordering Number

Lead Free

Halogen Free

3N65AL-TN3-R

3N65AG-TN3-R

3N65AL-TN3-T

3N65AG-TN3-T

Note: Pin Assignment: G: Gate D: Drain S: Source

Package

TO-252

Pin Assignment

Packing

Tape Reel

Tube

www.unisonic.com.tw

1 of 8

QW-R502-627.A

3N65AG-TN3-T Related Products

	3N65AG-TN3-T	3N65AL-TN3-R	3N65AG-TN3-R	3N65AL-TN3-T
Description	Power Field-Effect Transistor, 3A I(D), 650V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN FREE PACKAGE-3	Power Field-Effect Transistor, 3A I(D), 650V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, LEAD FREE PACKAGE-3	Power Field-Effect Transistor, 3A I(D), 650V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN FREE PACKAGE-3	Power Field-Effect Transistor, 3A I(D), 650V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, LEAD FREE PACKAGE-3
Is it Rohs certified?	conform to	conform to	conform to	conform to
Maker	UNISONIC TECHNOLOGIES CO.,LTD	UNISONIC TECHNOLOGIES CO.,LTD	UNISONIC TECHNOLOGIES CO.,LTD	UNISONIC TECHNOLOGIES CO.,LTD
Parts packaging code	TO-252	TO-252	TO-252	TO-252
package instruction	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2
Contacts	4	4	4	4
Reach Compliance Code	compliant	compliant	compliant	compliant
Avalanche Energy Efficiency Rating (Eas)	200 mJ	200 mJ	200 mJ	200 mJ
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	650 V	650 V	650 V	650 V
Maximum drain current (ID)	3 A	3 A	3 A	3 A
Maximum drain-source on-resistance	3.6 Ω	3.6 Ω	3.6 Ω	3.6 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-252	TO-252	TO-252	TO-252
JESD-30 code	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2
Number of components	1	1	1	1
Number of terminals	2	2	2	2
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	12 A	12 A	12 A	12 A
surface mount	YES	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON

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