Memory Circuit, Flash+SRAM, 4MX16, CMOS, PBGA77, 8 X 10 MM, LEAD FREE, FBGA-77
Parameter Name | Attribute value |
Is it Rohs certified? | conform to |
Maker | Micron Technology |
Parts packaging code | BGA |
package instruction | TFBGA, BGA77,8X10,32 |
Contacts | 77 |
Reach Compliance Code | compliant |
Maximum access time | 70 ns |
Other features | CELLULAR RAM IS ORGANIZED AS 1M X 16 |
JESD-30 code | R-PBGA-B77 |
JESD-609 code | e1 |
length | 10 mm |
memory density | 67108864 bit |
Memory IC Type | MEMORY CIRCUIT |
memory width | 16 |
Mixed memory types | FLASH+SRAM |
Number of functions | 1 |
Number of terminals | 77 |
word count | 4194304 words |
character code | 4000000 |
Operating mode | ASYNCHRONOUS |
Maximum operating temperature | 85 °C |
Minimum operating temperature | -25 °C |
organize | 4MX16 |
Package body material | PLASTIC/EPOXY |
encapsulated code | TFBGA |
Encapsulate equivalent code | BGA77,8X10,32 |
Package shape | RECTANGULAR |
Package form | GRID ARRAY, THIN PROFILE, FINE PITCH |
power supply | 1.8 V |
Certification status | Not Qualified |
Maximum seat height | 1.2 mm |
Maximum standby current | 0.000115 A |
Maximum supply voltage (Vsup) | 1.95 V |
Minimum supply voltage (Vsup) | 1.7 V |
Nominal supply voltage (Vsup) | 1.8 V |
surface mount | YES |
technology | CMOS |
Temperature level | OTHER |
Terminal surface | TIN SILVER COPPER |
Terminal form | BALL |
Terminal pitch | 0.8 mm |
Terminal location | BOTTOM |
width | 8 mm |