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MT28C64416W18ABW-F60P70KBWT

Description
Memory Circuit, Flash+SRAM, 4MX16, CMOS, PBGA77, 8 X 10 MM, LEAD FREE, FBGA-77
Categorystorage    storage   
File Size239KB,13 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
Environmental Compliance
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MT28C64416W18ABW-F60P70KBWT Overview

Memory Circuit, Flash+SRAM, 4MX16, CMOS, PBGA77, 8 X 10 MM, LEAD FREE, FBGA-77

MT28C64416W18ABW-F60P70KBWT Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerMicron Technology
Parts packaging codeBGA
package instructionTFBGA, BGA77,8X10,32
Contacts77
Reach Compliance Codecompliant
Maximum access time70 ns
Other featuresCELLULAR RAM IS ORGANIZED AS 1M X 16
JESD-30 codeR-PBGA-B77
JESD-609 codee1
length10 mm
memory density67108864 bit
Memory IC TypeMEMORY CIRCUIT
memory width16
Mixed memory typesFLASH+SRAM
Number of functions1
Number of terminals77
word count4194304 words
character code4000000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-25 °C
organize4MX16
Package body materialPLASTIC/EPOXY
encapsulated codeTFBGA
Encapsulate equivalent codeBGA77,8X10,32
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE, FINE PITCH
power supply1.8 V
Certification statusNot Qualified
Maximum seat height1.2 mm
Maximum standby current0.000115 A
Maximum supply voltage (Vsup)1.95 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelOTHER
Terminal surfaceTIN SILVER COPPER
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
width8 mm

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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