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SGSIF345

Description
7A, 600V, NPN, Si, POWER TRANSISTOR, TO-220, TO-220, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size164KB,5 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
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SGSIF345 Overview

7A, 600V, NPN, Si, POWER TRANSISTOR, TO-220, TO-220, 3 PIN

SGSIF345 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSTMicroelectronics
Parts packaging codeSFM
package instructionTO-220, 3 PIN
Contacts3
Reach Compliance Codenot_compliant
Other featuresHOLLOW-EMITTER
Shell connectionISOLATED
Maximum collector current (IC)7 A
Collector-emitter maximum voltage600 V
ConfigurationSINGLE
Minimum DC current gain (hFE)5
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power consumption environment40 W
Maximum power dissipation(Abs)40 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum off time (toff)3800 ns
Maximum opening time (tons)1200 ns
VCEsat-Max1.5 V

SGSIF345 Related Products

SGSIF345 SGSF545
Description 7A, 600V, NPN, Si, POWER TRANSISTOR, TO-220, TO-220, 3 PIN 7A, 600V, NPN, Si, POWER TRANSISTOR, TO-3
Is it Rohs certified? incompatible incompatible
Maker STMicroelectronics STMicroelectronics
package instruction TO-220, 3 PIN FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code not_compliant compliant
Other features HOLLOW-EMITTER HOLLOW-EMITTER
Shell connection ISOLATED COLLECTOR
Maximum collector current (IC) 7 A 7 A
Collector-emitter maximum voltage 600 V 600 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 5 5
JEDEC-95 code TO-220AB TO-3
JESD-30 code R-PSFM-T3 O-MBFM-P2
JESD-609 code e0 e0
Number of components 1 1
Number of terminals 3 2
Maximum operating temperature 150 °C 175 °C
Package body material PLASTIC/EPOXY METAL
Package shape RECTANGULAR ROUND
Package form FLANGE MOUNT FLANGE MOUNT
Polarity/channel type NPN NPN
Maximum power consumption environment 40 W 115 W
Maximum power dissipation(Abs) 40 W 115 W
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE PIN/PEG
Terminal location SINGLE BOTTOM
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Maximum off time (toff) 3800 ns 3800 ns
Maximum opening time (tons) 1200 ns 1200 ns
VCEsat-Max 1.5 V 1.5 V
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