SD5000CHP datasheet, PDF - EEWORLD Datasheet

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SD5000CHP: DescriptionSmall Signal Field-Effect Transistor, 0.05A I(D), 20V, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET; CategoryDiscrete semiconductor The transistor; File Size119KB，2 Pages; ManufacturerUniversal Semiconductor Inc

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SD5000CHP Overview

Small Signal Field-Effect Transistor, 0.05A I(D), 20V, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

SD5000CHP Parametric

Parameter Name	Attribute value
Maker	Universal Semiconductor Inc
package instruction	UNCASED CHIP, R-XUUC-N12
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	LOW INSERTION LOSS
Configuration	COMMON SUBSTRATE, 4 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	20 V
Maximum drain current (Abs) (ID)	0.05 A
Maximum drain current (ID)	0.05 A
Maximum drain-source on-resistance	70 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	0.5 pF
JESD-30 code	R-XUUC-N12
Number of components	4
Number of terminals	12
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	85 °C
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	UNCASED CHIP
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal form	NO LEAD
Terminal location	UPPER
transistor applications	SWITCHING
Transistor component materials	SILICON

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SD5000CHP Related Products

	SD5000CHP	SD5001J	SD5001N	SD5002N	SD5001CHP	SD5000J	SD5002CHP
Description	Small Signal Field-Effect Transistor, 0.05A I(D), 20V, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	Small Signal Field-Effect Transistor, 0.05A I(D), 10V, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CERDIP-16	Small Signal Field-Effect Transistor, 0.05A I(D), 10V, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, DIP-16	Small Signal Field-Effect Transistor, 0.05A I(D), 15V, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, DIP-16	Small Signal Field-Effect Transistor, 0.05A I(D), 10V, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	Small Signal Field-Effect Transistor, 0.05A I(D), 20V, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CERDIP-16	Small Signal Field-Effect Transistor, 0.05A I(D), 15V, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
package instruction	UNCASED CHIP, R-XUUC-N12	IN-LINE, R-GDIP-T16	IN-LINE, R-PDIP-T16	IN-LINE, R-PDIP-T16	UNCASED CHIP, R-XUUC-N12	IN-LINE, R-GDIP-T16	UNCASED CHIP, R-XUUC-N12
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Other features	LOW INSERTION LOSS	LOW INSERTION LOSS	LOW INSERTION LOSS	LOW INSERTION LOSS	LOW INSERTION LOSS	LOW INSERTION LOSS	LOW INSERTION LOSS
Configuration	COMMON SUBSTRATE, 4 ELEMENTS WITH BUILT-IN DIODE	COMMON SUBSTRATE, 4 ELEMENTS WITH BUILT-IN DIODE	COMMON SUBSTRATE, 4 ELEMENTS WITH BUILT-IN DIODE	COMMON SUBSTRATE, 4 ELEMENTS WITH BUILT-IN DIODE	COMMON SUBSTRATE, 4 ELEMENTS WITH BUILT-IN DIODE	COMMON SUBSTRATE, 4 ELEMENTS WITH BUILT-IN DIODE	COMMON SUBSTRATE, 4 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	20 V	10 V	10 V	15 V	10 V	20 V	15 V
Maximum drain current (ID)	0.05 A	0.05 A	0.05 A	0.05 A	0.05 A	0.05 A	0.05 A
Maximum drain-source on-resistance	70 Ω	70 Ω	70 Ω	70 Ω	70 Ω	70 Ω	70 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	0.5 pF	0.5 pF	0.5 pF	0.5 pF	0.5 pF	0.5 pF	0.5 pF
JESD-30 code	R-XUUC-N12	R-GDIP-T16	R-PDIP-T16	R-PDIP-T16	R-XUUC-N12	R-GDIP-T16	R-XUUC-N12
Number of components	4	4	4	4	4	4	4
Number of terminals	12	16	16	16	12	16	12
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	UNSPECIFIED	CERAMIC, GLASS-SEALED	PLASTIC/EPOXY	PLASTIC/EPOXY	UNSPECIFIED	CERAMIC, GLASS-SEALED	UNSPECIFIED
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	UNCASED CHIP	IN-LINE	IN-LINE	IN-LINE	UNCASED CHIP	IN-LINE	UNCASED CHIP
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	NO	NO	NO	YES	NO	YES
Terminal form	NO LEAD	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	NO LEAD	THROUGH-HOLE	NO LEAD
Terminal location	UPPER	DUAL	DUAL	DUAL	UPPER	DUAL	UPPER
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Maker	Universal Semiconductor Inc	-	-	-	Universal Semiconductor Inc	Universal Semiconductor Inc	Universal Semiconductor Inc
Maximum drain current (Abs) (ID)	0.05 A	0.05 A	0.05 A	-	0.05 A	0.05 A	-
Maximum operating temperature	85 °C	85 °C	85 °C	-	85 °C	85 °C	-
Parts packaging code	-	DIP	DIP	DIP	-	DIP	-
Contacts	-	16	16	16	-	16	-

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