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V54C3128164VCLJ10I

Description
Synchronous DRAM, 8MX16, 6ns, CMOS, PBGA60, GREEN, MO-210, FBGA-60
Categorystorage    storage   
File Size691KB,56 Pages
ManufacturerProMOS Technologies Inc
Download Datasheet Parametric View All

V54C3128164VCLJ10I Overview

Synchronous DRAM, 8MX16, 6ns, CMOS, PBGA60, GREEN, MO-210, FBGA-60

V54C3128164VCLJ10I Parametric

Parameter NameAttribute value
MakerProMOS Technologies Inc
Parts packaging codeBGA
package instructionTFBGA,
Contacts60
Reach Compliance Codecompliant
ECCN codeEAR99
access modeFOUR BANK PAGE BURST
Maximum access time6 ns
Other featuresAUTO/SELF REFRESH
JESD-30 codeR-PBGA-B60
length13 mm
memory density134217728 bit
Memory IC TypeSYNCHRONOUS DRAM
memory width16
Number of functions1
Number of ports1
Number of terminals60
word count8388608 words
character code8000000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize8MX16
Package body materialPLASTIC/EPOXY
encapsulated codeTFBGA
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE, FINE PITCH
Certification statusNot Qualified
Maximum seat height1.2 mm
self refreshYES
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
width8 mm
V54C3128(16/80/40)4VC
128Mbit SDRAM
3.3 VOLT, TSOP II / BGA PACKAGE
8M X 16, 16M X 8, 32M X 4
5
System Frequency (f
CK
)
Clock Cycle Time (t
CK3
)
Clock Access Time (t
AC3
) CAS Latency = 3
Clock Access Time (t
AC2
) CAS Latency = 2
200 MHz
5 ns
4.5 ns
4.5 ns
6
166 MHz
6 ns
5.4 ns
5.4 ns
7PC
143 MHz
7 ns
5.4 ns
5.4 ns
7
143 MHz
7 ns
5.4 ns
6 ns
10
100 MHz
10 ns
6 ns
6 ns
Features
4 banks x 2Mbit x 16 organization
4 banks x 4Mbit x 8 organization
4 banks x 8Mbit x 4 organization
High speed data transfer rates up to 200 MHz
Full Synchronous Dynamic RAM, with all signals
referenced to clock rising edge
Single Pulsed RAS Interface
Data Mask for Read/Write Control
Four Banks controlled by BA0 & BA1
Programmable CAS Latency: 2, 3
Programmable Wrap Sequence: Sequential or
Interleave
Programmable Burst Length:
1, 2, 4, 8, and full page for Sequential Type
1, 2, 4, 8 for Interleave Type
Multiple Burst Read with Single Write Operation
Automatic and Controlled Precharge Command
Random Column Address every CLK (1-N Rule)
Power Down Mode
Auto Refresh and Self Refresh
Refresh Interval: 4096 cycles/64 ms
Available in 54 Pin TSOP II, 54 Ball BGA, 60 Ball
BGA
LVTTL Interface
Single +3.3 V
±0.3
V Power Supply
Description
The V54C3128(16/80/40)4VC is a four bank Syn-
chronous DRAM organized as 4 banks x 2Mbit x 16,
4 banks x 4Mbit x 8, or 4 banks x 8Mbit x 4. The
V54C3128(16/80/40)4VC achieves high speed data
transfer rates up to 200 MHz by employing a chip
architecture that prefetches multiple bits and then
synchronizes the output data to a system clock
All of the control, address, data input and output
circuits are synchronized with the positive edge of
an externally supplied clock.
Operating the four memory banks in an inter-
leaved fashion allows random access operation to
occur at higher rate than is possible with standard
DRAMs. A sequential and gapless data rate of up to
200 MHz is possible depending on burst length,
CAS latency and speed grade of the device.
Device Usage Chart
Operating
Temperature
Range
0°C to 70°C
-40°C to 85°C
-40°C to 105°C
-40°C to 125°C
Package Outline
J/K/I
Access Time (ns)
5
Power
7
6
7PC
Std.
L
Temperature
Mark
Blank
I
H
E
V54C3128(16/80/40)4VC Rev. 1.3 November 2008
1
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