SPP16N50C3 datasheet, PDF - EEWORLD Datasheet

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SPP16N50C3: Description16A, 500V, 0.28ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size1MB，15 Pages; ManufacturerRochester Electronics; Websitehttps://www.rocelec.com/; Environmental Compliance

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SPP16N50C3 Overview

16A, 500V, 0.28ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN

SPP16N50C3 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Rochester Electronics
Parts packaging code	TO-220AB
package instruction	GREEN, PLASTIC, TO-220, 3 PIN
Contacts	3
Reach Compliance Code	unknown
Other features	AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)	460 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	500 V
Maximum drain current (ID)	16 A
Maximum drain-source on-resistance	0.28 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
JESD-609 code	e3
Humidity sensitivity level	NOT SPECIFIED
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	48 A
Certification status	COMMERCIAL
surface mount	NO
Terminal surface	MATTE TIN
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

SPP16N50C3 Related Products

	SPP16N50C3	SPI16N50C3
Description	16A, 500V, 0.28ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN	16A, 500V, 0.28ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3
Is it lead-free?	Lead free	Lead free
Is it Rohs certified?	conform to	conform to
Maker	Rochester Electronics	Rochester Electronics
Parts packaging code	TO-220AB	TO-262AA
package instruction	GREEN, PLASTIC, TO-220, 3 PIN	GREEN, PLASTIC, TO-262, I2PAK-3
Contacts	3	3
Reach Compliance Code	unknown	unknown
Other features	AVALANCHE RATED	AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)	460 mJ	460 mJ
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	500 V	500 V
Maximum drain current (ID)	16 A	16 A
Maximum drain-source on-resistance	0.28 Ω	0.28 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-220AB	TO-262AA
JESD-30 code	R-PSFM-T3	R-PSIP-T3
JESD-609 code	e3	e3
Humidity sensitivity level	NOT SPECIFIED	NOT SPECIFIED
Number of components	1	1
Number of terminals	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	IN-LINE
Peak Reflow Temperature (Celsius)	260	260
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	48 A	48 A
Certification status	COMMERCIAL	COMMERCIAL
surface mount	NO	NO
Terminal surface	MATTE TIN	MATTE TIN
Terminal form	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	40
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON

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