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EDI8F1664CA45MSC

Description
SRAM Module, 128KX8, 45ns, CMOS,
Categorystorage    storage   
File Size98KB,1 Pages
ManufacturerEDI [Electronic devices inc.]
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EDI8F1664CA45MSC Overview

SRAM Module, 128KX8, 45ns, CMOS,

EDI8F1664CA45MSC Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerEDI [Electronic devices inc.]
Reach Compliance Codeunknown
Maximum access time45 ns
Spare memory width16
I/O typeCOMMON
JESD-30 codeR-XSMA-T40
JESD-609 codee0
memory density1048576 bit
Memory IC TypeSRAM MODULE
memory width8
Number of functions1
Number of ports1
Number of terminals40
word count131072 words
character code128000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize128KX8
Output characteristics3-STATE
ExportableYES
Package body materialUNSPECIFIED
Encapsulate equivalent codeSIP40,.1
Package shapeRECTANGULAR
Package formMICROELECTRONIC ASSEMBLY
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply5 V
Certification statusNot Qualified
Minimum standby current4.5 V
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED

EDI8F1664CA45MSC Related Products

EDI8F1664CA45MSC EDI8F1664CA30M6C EDI8F1664CA45M6C EDI8F1664CA25MSC EDI8F1664CA30MSC EDI8F1664CA35MSC EDI8F1664CA25M6C EDI8F1664CA35M6C
Description SRAM Module, 128KX8, 45ns, CMOS, SRAM Module, 128KX8, 30ns, CMOS, SRAM Module, 128KX8, 45ns, CMOS, SRAM Module, 128KX8, 25ns, CMOS, SRAM Module, 128KX8, 30ns, CMOS, SRAM Module, 128KX8, 35ns, CMOS, SRAM Module, 128KX8, 25ns, CMOS, SRAM Module, 128KX8, 35ns, CMOS,
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible incompatible incompatible incompatible
Maker EDI [Electronic devices inc.] EDI [Electronic devices inc.] EDI [Electronic devices inc.] EDI [Electronic devices inc.] EDI [Electronic devices inc.] EDI [Electronic devices inc.] EDI [Electronic devices inc.] EDI [Electronic devices inc.]
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknow
Maximum access time 45 ns 30 ns 45 ns 25 ns 30 ns 35 ns 25 ns 35 ns
Spare memory width 16 16 16 16 16 16 16 16
I/O type COMMON COMMON COMMON COMMON COMMON COMMON COMMON COMMON
JESD-30 code R-XSMA-T40 R-XDMA-T40 R-XDMA-T40 R-XSMA-T40 R-XSMA-T40 R-XSMA-T40 R-XDMA-T40 R-XDMA-T40
JESD-609 code e0 e0 e0 e0 e0 e0 e0 e0
memory density 1048576 bit 1048576 bit 1048576 bit 1048576 bit 1048576 bit 1048576 bit 1048576 bit 1048576 bi
Memory IC Type SRAM MODULE SRAM MODULE SRAM MODULE SRAM MODULE SRAM MODULE SRAM MODULE SRAM MODULE SRAM MODULE
memory width 8 8 8 8 8 8 8 8
Number of functions 1 1 1 1 1 1 1 1
Number of ports 1 1 1 1 1 1 1 1
Number of terminals 40 40 40 40 40 40 40 40
word count 131072 words 131072 words 131072 words 131072 words 131072 words 131072 words 131072 words 131072 words
character code 128000 128000 128000 128000 128000 128000 128000 128000
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C
organize 128KX8 128KX8 128KX8 128KX8 128KX8 128KX8 128KX8 128KX8
Output characteristics 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE
Exportable YES YES YES YES YES YES YES YES
Package body material UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
Encapsulate equivalent code SIP40,.1 DIP40,.6 DIP40,.6 SIP40,.1 SIP40,.1 SIP40,.1 DIP40,.6 DIP40,.6
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
Parallel/Serial PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
power supply 5 V 5 V 5 V 5 V 5 V 5 V 5 V 5 V
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Minimum standby current 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V
Maximum supply voltage (Vsup) 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V
Minimum supply voltage (Vsup) 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V
Nominal supply voltage (Vsup) 5 V 5 V 5 V 5 V 5 V 5 V 5 V 5 V
surface mount NO NO NO NO NO NO NO NO
technology CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
Temperature level COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal pitch 2.54 mm 2.54 mm 2.54 mm 2.54 mm 2.54 mm 2.54 mm 2.54 mm 2.54 mm
Terminal location SINGLE DUAL DUAL SINGLE SINGLE SINGLE DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED

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