EDI8F1664CA25MSC datasheet, PDF

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EDI8F1664CA25MSC: DescriptionSRAM Module, 128KX8, 25ns, CMOS,; Categorystorage storage; File Size98KB，1 Pages; ManufacturerEDI [Electronic devices inc.]

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EDI8F1664CA25MSC Overview

SRAM Module, 128KX8, 25ns, CMOS,

EDI8F1664CA25MSC Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	EDI [Electronic devices inc.]
Reach Compliance Code	unknown
Maximum access time	25 ns
Spare memory width	16
I/O type	COMMON
JESD-30 code	R-XSMA-T40
JESD-609 code	e0
memory density	1048576 bit
Memory IC Type	SRAM MODULE
memory width	8
Number of functions	1
Number of ports	1
Number of terminals	40
word count	131072 words
character code	128000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	128KX8
Output characteristics	3-STATE
Exportable	YES
Package body material	UNSPECIFIED
Encapsulate equivalent code	SIP40,.1
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	5 V
Certification status	Not Qualified
Minimum standby current	4.5 V
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED

EDI8F1664CA25MSC Related Products

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Description	SRAM Module, 128KX8, 25ns, CMOS,	SRAM Module, 128KX8, 30ns, CMOS,	SRAM Module, 128KX8, 45ns, CMOS,	SRAM Module, 128KX8, 45ns, CMOS,	SRAM Module, 128KX8, 30ns, CMOS,	SRAM Module, 128KX8, 35ns, CMOS,	SRAM Module, 128KX8, 25ns, CMOS,	SRAM Module, 128KX8, 35ns, CMOS,
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Maker	EDI [Electronic devices inc.]	EDI [Electronic devices inc.]	EDI [Electronic devices inc.]	EDI [Electronic devices inc.]	EDI [Electronic devices inc.]	EDI [Electronic devices inc.]	EDI [Electronic devices inc.]	EDI [Electronic devices inc.]
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknow
Maximum access time	25 ns	30 ns	45 ns	45 ns	30 ns	35 ns	25 ns	35 ns
Spare memory width	16	16	16	16	16	16	16	16
I/O type	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 code	R-XSMA-T40	R-XDMA-T40	R-XDMA-T40	R-XSMA-T40	R-XSMA-T40	R-XSMA-T40	R-XDMA-T40	R-XDMA-T40
JESD-609 code	e0	e0	e0	e0	e0	e0	e0	e0
memory density	1048576 bit	1048576 bit	1048576 bit	1048576 bit	1048576 bit	1048576 bit	1048576 bit	1048576 bi
Memory IC Type	SRAM MODULE	SRAM MODULE	SRAM MODULE	SRAM MODULE	SRAM MODULE	SRAM MODULE	SRAM MODULE	SRAM MODULE
memory width	8	8	8	8	8	8	8	8
Number of functions	1	1	1	1	1	1	1	1
Number of ports	1	1	1	1	1	1	1	1
Number of terminals	40	40	40	40	40	40	40	40
word count	131072 words	131072 words	131072 words	131072 words	131072 words	131072 words	131072 words	131072 words
character code	128000	128000	128000	128000	128000	128000	128000	128000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
organize	128KX8	128KX8	128KX8	128KX8	128KX8	128KX8	128KX8	128KX8
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Exportable	YES	YES	YES	YES	YES	YES	YES	YES
Package body material	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
Encapsulate equivalent code	SIP40,.1	DIP40,.6	DIP40,.6	SIP40,.1	SIP40,.1	SIP40,.1	DIP40,.6	DIP40,.6
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
power supply	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Minimum standby current	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V
Maximum supply voltage (Vsup)	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V
Minimum supply voltage (Vsup)	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V
Nominal supply voltage (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V
surface mount	NO	NO	NO	NO	NO	NO	NO	NO
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal pitch	2.54 mm	2.54 mm	2.54 mm	2.54 mm	2.54 mm	2.54 mm	2.54 mm	2.54 mm
Terminal location	SINGLE	DUAL	DUAL	SINGLE	SINGLE	SINGLE	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED

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