H5N2004DS datasheet, PDF - EEWORLD Datasheet

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H5N2004DS: DescriptionPower Field-Effect Transistor, 8A I(D), 200V, 0.48ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3; CategoryDiscrete semiconductor The transistor; File Size56KB，12 Pages; ManufacturerHitachi （Renesas ）; Websitehttp://www.renesas.com/eng/

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H5N2004DS Overview

Power Field-Effect Transistor, 8A I(D), 200V, 0.48ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3

H5N2004DS Parametric

Parameter Name	Attribute value
Maker	Hitachi （Renesas ）
package instruction	SMALL OUTLINE, R-PSSO-G2
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	200 V
Maximum drain current (ID)	8 A
Maximum drain-source on-resistance	0.48 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-G2
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	32 A
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON

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H5N2004DL, H5N2004DS

Silicon N Channel MOS FET

High Speed Power Switching

ADE-208-1372 (Z)

1st. Edition

Mar. 2001

Features

•

Low on-resistance: R

DS(on)

= 0.38 typ.

•

Low leakage current: IDSS = 1 µA max (at VDS = 200 V)

•

High speed switching: tf = 10 ns typ (at VGS = 10 V, VDD = 100 V, ID = 4 A)

•

Low gate charge: Qg = 14 nC typ (at VDD = 160 V, VGS = 10 V, ID = 8 A)

•

Avalanche ratings

Outline

DPAK-2

1 2

H5N2004DS

1 2

H5N2004DL

1. Gate

2. Drain

3. Source

4. Drain

H5N2004DS Related Products

	H5N2004DS	H5N2004DL	H5N2004D(S)-(3)	H5N2004D(S)-(1)
Description	Power Field-Effect Transistor, 8A I(D), 200V, 0.48ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3	Power Field-Effect Transistor, 8A I(D), 200V, 0.48ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Reach Compliance Code	unknown	unknown	unknown	unknown
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	Single	Single
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
surface mount	YES	NO	YES	YES
Base Number Matches	-	1	1	1

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