IRHN8230 datasheet, PDF - EEWORLD Datasheet

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IRHN8230: DescriptionPower Field-Effect Transistor, 9A I(D), 200V, 0.49ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD1, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size443KB，12 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

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IRHN8230 Overview

Power Field-Effect Transistor, 9A I(D), 200V, 0.49ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD1, 3 PIN

IRHN8230 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Infineon
package instruction	CHIP CARRIER, R-CBCC-N3
Reach Compliance Code	not_compliant
ECCN code	EAR99
Other features	RADIATION HARDENED
Avalanche Energy Efficiency Rating (Eas)	330 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	200 V
Maximum drain current (Abs) (ID)	6 A
Maximum drain current (ID)	9 A
Maximum drain-source on-resistance	0.49 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-CBCC-N3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR
Package form	CHIP CARRIER
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	40 W
Maximum pulsed drain current (IDM)	36 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	NO LEAD
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

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PD - 90822C

RADIATION HARDENED

POWER MOSFET

SURFACE MOUNT(SMD-1)

Product Summary

Part Number Radiation Level

IRHN7230

100K Rads (Si)

IRHN3230

300K Rads (Si)

IRHN4230

600K Rads (Si)

IRHN8230

1000K Rads (Si)

DS(on)

0.40Ω

9.0A

IRHN7230

200V, N-CHANNEL

RAD Hard HEXFET

TECHNOLOGY

SMD-1

International Rectifiers RADHard HEXFET

technol-

ogy provides high performance power MOSFETs for

space applications. This technology has over a de-

cade of proven performance and reliability in satellite

applications. These devices have been character-

ized for both Total Dose and Single Event Effects (SEE).

The combination of low Rdson and low gate charge

reduces the power losses in switching applications

such as DC to DC converters and motor control. These

devices retain all of the well established advantages

of MOSFETs such as voltage control, fast switching,

ease of paralleling and temperature stability of elec-

trical parameters.

Features:

Single Event Effect (SEE) Hardened

Low R

DS(on)

Low Total Gate Charge

Proton Tolerant

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Ceramic Package

Light Weight

Surface Mount

Absolute Maximum Ratings

Parameter

ID @ VGS = 12V, TC = 25°C

ID @ VGS = 12V, TC = 100°C

IDM

PD @ TC = 25°C

VGS

EAS

IAR

EAR

dv/dt

TSTG

Continuous Drain Current

Pulsed Drain Current

➀

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy

➁

Avalanche Current

➀

Repetitive Avalanche Energy

➀

Peak Diode Recovery dv/dt

➂

Operating Junction

Storage Temperature Range

Package Mounting Surface Temperature

Weight

For footnotes refer to the last page

9.0

6.0

0.60

±20

330

9.0

7.5

5.0

-55 to 150

Pre-Irradiation

Units

W/°C

V/ns

300 ( for 5s)

2.6 (Typical )

www.irf.com

8/10/01

IRHN8230 Related Products

	IRHN8230	IRHN7230	IRHN3230
Description	Power Field-Effect Transistor, 9A I(D), 200V, 0.49ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD1, 3 PIN	Power Field-Effect Transistor, 9A I(D), 200V, 0.49ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD1, 3 PIN	Power Field-Effect Transistor, 9A I(D), 200V, 0.49ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD1, 3 PIN
Is it Rohs certified?	incompatible	incompatible	incompatible
package instruction	CHIP CARRIER, R-CBCC-N3	HERMETIC SEALED, CERAMIC, SMD1, 3 PIN	CHIP CARRIER, R-CBCC-N3
Reach Compliance Code	not_compliant	compliant	not_compliant
ECCN code	EAR99	EAR99	EAR99
Avalanche Energy Efficiency Rating (Eas)	330 mJ	330 mJ	330 mJ
Shell connection	DRAIN	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	200 V	200 V	200 V
Maximum drain current (Abs) (ID)	6 A	6 A	9 A
Maximum drain current (ID)	9 A	9 A	9 A
Maximum drain-source on-resistance	0.49 Ω	0.49 Ω	0.49 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-CBCC-N3	R-CBCC-N3	R-CBCC-N3
JESD-609 code	e0	e0	e0
Number of components	1	1	1
Number of terminals	3	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C	150 °C
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	40 W	40 W	75 W
Maximum pulsed drain current (IDM)	36 A	36 A	36 A
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	NO LEAD	NO LEAD	NO LEAD
Terminal location	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
Maker	Infineon	-	Infineon
Other features	RADIATION HARDENED	RADIATION HARDENED	-

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