SRAM Module, 8KX8, 120ns, CMOS, CDIP28,
Parameter Name | Attribute value |
Is it Rohs certified? | incompatible |
Maker | EDI [Electronic devices inc.] |
Reach Compliance Code | unknown |
Maximum access time | 120 ns |
I/O type | COMMON |
JESD-30 code | R-XDIP-T28 |
JESD-609 code | e0 |
memory density | 65536 bit |
Memory IC Type | SRAM MODULE |
memory width | 8 |
Number of terminals | 28 |
word count | 8192 words |
character code | 8000 |
Operating mode | ASYNCHRONOUS |
Maximum operating temperature | 125 °C |
Minimum operating temperature | -55 °C |
organize | 8KX8 |
Output characteristics | 3-STATE |
Package body material | CERAMIC |
encapsulated code | DIP |
Encapsulate equivalent code | DIP28,.6 |
Package shape | RECTANGULAR |
Package form | IN-LINE |
Parallel/Serial | PARALLEL |
power supply | 5 V |
Certification status | Not Qualified |
Filter level | MIL-STD-883 Class B (Modified) |
Maximum standby current | 0.0025 A |
Minimum standby current | 4.5 V |
Maximum slew rate | 0.15 mA |
Nominal supply voltage (Vsup) | 5 V |
surface mount | NO |
technology | CMOS |
Temperature level | MILITARY |
Terminal surface | Tin/Lead (Sn/Pb) |
Terminal form | THROUGH-HOLE |
Terminal pitch | 2.54 mm |
Terminal location | DUAL |