Advanced Technical Information
HiPerFET
TM
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt
Gate Charge and Capacitances
IXFH 20N60Q
IXFT 20N60Q
V
DSS
I
D25
R
DS(on)
=
=
=
600 V
20 A
0.35
W
t
rr
£
250ns
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 MW
Continuous
Transient
T
C
= 25°C
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25°C
T
C
= 25°C
T
C
= 25°C
I
S
£
I
DM
, di/dt
£
100 A/ms, V
DD
£
V
DSS
,
T
J
£
150°C, R
G
= 2
W
T
C
= 25°C
Maximum Ratings
600
600
±20
±30
20
80
20
30
1.5
5
V
V
V
V
A
A
A
mJ
J
V/ns
TO-247 AD (IXFH)
(TAB)
TO-268 (IXFT) Case Style
G
S
(TAB)
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
300
-55 ... +150
150
-55 ... +150
W
°C
°C
°C
°C
G = Gate
S = Source
D = Drain
TAB = Drain
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
TO-247 AD
TO-268
300
Features
• IXYS advanced low gate charge
process
• International standard packages
• Low gate charge and capacitance
- easier to drive
- faster switching
• Low R
DS (on)
• Unclamped Inductive Switching (UIS)
rated
• Molding epoxies meet UL 94 V-0
flammability classification
1.13/10 Nm/lb.in.
6
4
g
g
Symbol
Test Conditions
(T
J
= 25°C, unless otherwise specified)
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
=
250 mA
V
DS
= V
GS
, I
D
= 4 mA
V
GS
=
±20
V
DC
, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
T
J
= 25°C
T
J
= 125°C
Characteristic Values
Min. Typ.
Max.
600
2.0
4
±100
25
1
0.35
V
V
nA
mA
mA
W
Advantages
• Easy to mount
• Space savings
• High power density
V
GS
= 10 V, I
D
= 0.5 I
D25
Pulse test, t
£
300
ms,
duty cycle d
£
2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
98549A (6/99)
© 2000 IXYS All rights reserved
1-2
IXFH 20N60Q
IXFT 20N60Q
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
Min. Typ. Max.
10
24
3700
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
400
90
20
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
R
G
= 1.5
W
(External)
20
45
20
95
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
25
45
0.42
(TO-247)
0.25
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
K/W
K/W
Dim. Millimeter
Min. Max.
A
B
C
D
E
F
G
H
19.81 20.32
20.80 21.46
15.75 16.26
3.55 3.65
4.32 5.49
5.4
6.2
1.65 2.13
-
4.5
1.0
1.4
10.8 11.0
4.7
0.4
5.3
0.8
Inches
Min. Max.
0.780 0.800
0.819 0.845
0.610 0.640
0.140 0.144
0.170 0.216
0.212 0.244
0.065 0.084
-
0.177
0.040 0.055
0.426 0.433
0.185 0.209
0.016 0.031
0.087 0.102
TO-247 AD (IXFH) Outline
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCK
V
DS
= 10 V; I
D
= 0.5 I
D25
, pulse test
Source-Drain Diode
Symbol
I
S
I
SM
V
SD
t
rr
Q
RM
I
RM
Test Conditions
V
GS
= 0 V
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
20
80
1.5
250
A
A
V
ns
mC
A
J
K
L
M
N
1.5 2.49
Repetitive; pulse width limited by T
JM
I
F
= I
S
, V
GS
= 0 V,
Pulse test, t
£
300
ms,
duty cycle d
£
2 %
I
F
= I
S,
-di/dt = 100 A/ms, V
R
= 100 V
0.85
8
TO-268AA (D
3
PAK)
Dim.
A
A
1
A
2
b
b
2
C
D
E
E
1
e
H
L
L1
L2
L3
L4
Millimeter
Min. Max.
4.9
5.1
2.7
2.9
.02
.25
1.15
1.45
1.9
2.1
.4
.65
13.80 14.00
15.85 16.05
13.3
13.6
5.45 BSC
18.70 19.10
2.40
2.70
1.20
1.40
1.00
1.15
0.25 BSC
3.80
4.10
Inches
Min. Max.
.193 .201
.106 .114
.001 .010
.045 .057
.75
.83
.016 .026
.543 .551
.624 .632
.524 .535
.215 BSC
.736 .752
.094 .106
.047 .055
.039 .045
.010 BSC
.150 .161
Min. Recommended Footprint
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
2-2
PCB Design
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