Cache SRAM, 256KX18, 4.2ns, CMOS, PBGA119, BGA-119
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | IDT (Integrated Device Technology) |
| Parts packaging code | BGA |
| package instruction | BGA-119 |
| Contacts | 119 |
| Reach Compliance Code | not_compliant |
| ECCN code | 3A991.B.2.A |
| Maximum access time | 4.2 ns |
| Other features | PIPELINED ARCHITECTURE |
| Maximum clock frequency (fCLK) | 133 MHz |
| I/O type | COMMON |
| JESD-30 code | R-PBGA-B119 |
| JESD-609 code | e0 |
| length | 22 mm |
| memory density | 4718592 bit |
| Memory IC Type | CACHE SRAM |
| memory width | 18 |
| Humidity sensitivity level | 3 |
| Number of functions | 1 |
| Number of terminals | 119 |
| word count | 262144 words |
| character code | 256000 |
| Operating mode | SYNCHRONOUS |
| Maximum operating temperature | 85 °C |
| Minimum operating temperature | -40 °C |
| organize | 256KX18 |
| Output characteristics | 3-STATE |
| Package body material | PLASTIC/EPOXY |
| encapsulated code | BGA |
| Encapsulate equivalent code | BGA119,7X17,50 |
| Package shape | RECTANGULAR |
| Package form | GRID ARRAY |
| Parallel/Serial | PARALLEL |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| power supply | 3.3 V |
| Certification status | Not Qualified |
| Maximum seat height | 2.36 mm |
| Maximum standby current | 0.035 A |
| Minimum standby current | 3.14 V |
| Maximum slew rate | 0.26 mA |
| Maximum supply voltage (Vsup) | 3.465 V |
| Minimum supply voltage (Vsup) | 3.135 V |
| Nominal supply voltage (Vsup) | 3.3 V |
| surface mount | YES |
| technology | CMOS |
| Temperature level | INDUSTRIAL |
| Terminal surface | Tin/Lead (Sn63Pb37) |
| Terminal form | BALL |
| Terminal pitch | 1.27 mm |
| Terminal location | BOTTOM |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| width | 14 mm |
| IDT71V3578S133BGI8 | IDT71V3578S133BG8 | IDT71V3578S133BGGI8 | |
|---|---|---|---|
| Description | Cache SRAM, 256KX18, 4.2ns, CMOS, PBGA119, BGA-119 | Cache SRAM, 256KX18, 4.2ns, CMOS, PBGA119, BGA-119 | Cache SRAM, 256KX18, 4.2ns, CMOS, PBGA119, BGA-119 |
| Is it Rohs certified? | incompatible | incompatible | conform to |
| Maker | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) |
| Parts packaging code | BGA | BGA | BGA |
| package instruction | BGA-119 | BGA-119 | BGA-119 |
| Contacts | 119 | 119 | 119 |
| Reach Compliance Code | not_compliant | not_compliant | unknown |
| ECCN code | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A |
| Maximum access time | 4.2 ns | 4.2 ns | 4.2 ns |
| Other features | PIPELINED ARCHITECTURE | PIPELINED ARCHITECTURE | PIPELINED ARCHITECTURE |
| Maximum clock frequency (fCLK) | 133 MHz | 133 MHz | 133 MHz |
| I/O type | COMMON | COMMON | COMMON |
| JESD-30 code | R-PBGA-B119 | R-PBGA-B119 | R-PBGA-B119 |
| JESD-609 code | e0 | e0 | e1 |
| length | 22 mm | 22 mm | 22 mm |
| memory density | 4718592 bit | 4718592 bit | 4718592 bit |
| Memory IC Type | CACHE SRAM | CACHE SRAM | CACHE SRAM |
| memory width | 18 | 18 | 18 |
| Humidity sensitivity level | 3 | 3 | 3 |
| Number of functions | 1 | 1 | 1 |
| Number of terminals | 119 | 119 | 119 |
| word count | 262144 words | 262144 words | 262144 words |
| character code | 256000 | 256000 | 256000 |
| Operating mode | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
| Maximum operating temperature | 85 °C | 70 °C | 85 °C |
| Minimum operating temperature | -40 °C | - | -40 °C |
| organize | 256KX18 | 256KX18 | 256KX18 |
| Output characteristics | 3-STATE | 3-STATE | 3-STATE |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| encapsulated code | BGA | BGA | BGA |
| Encapsulate equivalent code | BGA119,7X17,50 | BGA119,7X17,50 | BGA119,7X17,50 |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | GRID ARRAY | GRID ARRAY | GRID ARRAY |
| Parallel/Serial | PARALLEL | PARALLEL | PARALLEL |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED | 260 |
| power supply | 3.3 V | 3.3 V | 3.3 V |
| Certification status | Not Qualified | Not Qualified | Not Qualified |
| Maximum seat height | 2.36 mm | 2.36 mm | 2.36 mm |
| Maximum standby current | 0.035 A | 0.03 A | 0.035 A |
| Minimum standby current | 3.14 V | 3.14 V | 3.14 V |
| Maximum slew rate | 0.26 mA | 0.25 mA | 0.26 mA |
| Maximum supply voltage (Vsup) | 3.465 V | 3.465 V | 3.465 V |
| Minimum supply voltage (Vsup) | 3.135 V | 3.135 V | 3.135 V |
| Nominal supply voltage (Vsup) | 3.3 V | 3.3 V | 3.3 V |
| surface mount | YES | YES | YES |
| technology | CMOS | CMOS | CMOS |
| Temperature level | INDUSTRIAL | COMMERCIAL | INDUSTRIAL |
| Terminal surface | Tin/Lead (Sn63Pb37) | Tin/Lead (Sn63Pb37) | Tin/Silver/Copper (Sn/Ag/Cu) |
| Terminal form | BALL | BALL | BALL |
| Terminal pitch | 1.27 mm | 1.27 mm | 1.27 mm |
| Terminal location | BOTTOM | BOTTOM | BOTTOM |
| Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED | 30 |
| width | 14 mm | 14 mm | 14 mm |
EEWorld
subscription
account
EEWorld
service
account
Automotive
development
circle
京公网安备 11010802033920号
EEWORLD