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PTVA104501EHV1R250

Description
RF Power Field-Effect Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size395KB,4 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

PTVA104501EHV1R250 Overview

RF Power Field-Effect Transistor,

PTVA104501EHV1R250 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerInfineon
package instruction,
Reach Compliance Codecompliant
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum time at peak reflow temperatureNOT SPECIFIED
advance specification
PTVA104501EH
Description
The PTVA104501EH LDMOS FET is designed for use in power ampli-
fier applications in the 960 to 1215 MHz frequency band. Features
include high gain and thermally-enhanced package with bolt-down
flange. Manufactured with Infineon's advanced LDMOS process, this
device provides excellent thermal performance and superior reliability.
Advance Specification Data
Sheets
describe products that
are being considered by Infineon
for development and market intro-
duction. The target performance
shown in Advance Specifications
is not final and should not be used
for any design activity. Please
contact Infineon about the future
availability of these products.
Features
Broadband input and output matching
High gain and efficiency
Integrated ESD protection
Low thermal resistance
Pb-free and RoHS compliant
Capable of withstanding a 10:1 load mismatch
(all phase angles) at 450 W peak under RF pulse,
128 µS, 10% duty cycle.
PTVA104501EH
Package H-36288-2
Target RF Characteristics
Typical RF Performance
V
DD
= 50 V, I
DQ
= 200 mA, Input signal (t
r
= 7.0 ns, t
f
= 7.0 ns), 128 µs pulse width, 10% duty cycle, class AB test
Mode of
Operation
128 µs, 10%
ƒ
(MHz)
960
1030
1090
1150
1215
IRL
(dB)
–9.5
–16.0
–9.5
–15.0
–14.0
P
1dB
Gain
(dB)
17
18.4
18.4
19
19.2
Eff
(%)
58.7
63.4
61.6
60.8
57
P
OUT
(W)
460
470
510
540
460
Gain
(dB)
15.1
16.4
16.5
16.9
17.3
P
3dB
Eff
(%)
56
64.5
63.3
62
57.2
P
OUT
(W)
490
540
590
620
510
Max
P
droop (pulse)
@ P
1dB
0.15
0.15
0.20
0.20
0.20
t
r (ns)
@P
1dB
5
5
5
5
5
t
f (ns)
@P
1dB
<2
<2
<2
<2
<2
All published data at T
CASE
= 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Advance Specification
1 of 4
Rev. 01, 2013-05-21
advance specification
Thermally-Enhanced High Power RF LDMOS FET
450 W, 50 V, 960 – 1215 MHz

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Reach Compliance Code compliant compliant compliant
Is it Rohs certified? conform to - conform to
Peak Reflow Temperature (Celsius) NOT SPECIFIED - NOT SPECIFIED
Maximum time at peak reflow temperature NOT SPECIFIED - NOT SPECIFIED
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