Small Signal Field-Effect Transistor, 0.5A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
Parameter Name | Attribute value |
Is it Rohs certified? | incompatible |
Maker | Supertex |
Reach Compliance Code | compliant |
ECCN code | EAR99 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage | 60 V |
Maximum drain current (ID) | 0.5 A |
Maximum drain-source on-resistance | 3 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR |
Maximum feedback capacitance (Crss) | 8 pF |
JEDEC-95 code | TO-92 |
JESD-30 code | O-PBCY-T3 |
JESD-609 code | e0 |
Number of components | 1 |
Number of terminals | 3 |
Operating mode | ENHANCEMENT MODE |
Maximum operating temperature | 150 °C |
Package body material | PLASTIC/EPOXY |
Package shape | ROUND |
Package form | CYLINDRICAL |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
Polarity/channel type | N-CHANNEL |
Maximum power consumption environment | 1 W |
Certification status | Not Qualified |
surface mount | NO |
Terminal surface | TIN LEAD |
Terminal form | THROUGH-HOLE |
Terminal location | BOTTOM |
Maximum time at peak reflow temperature | NOT SPECIFIED |
transistor applications | SWITCHING |
Transistor component materials | SILICON |