Small Signal Bipolar Transistor, 0.5A I(C), 350V V(BR)CEO, 1-Element, PNP, Silicon
Parameter Name | Attribute value |
Is it Rohs certified? | conform to |
Maker | Zetex Semiconductors |
package instruction | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code | compliant |
ECCN code | EAR99 |
Maximum collector current (IC) | 0.5 A |
Collector-based maximum capacity | 6 pF |
Collector-emitter maximum voltage | 350 V |
Configuration | SINGLE |
Minimum DC current gain (hFE) | 20 |
JESD-30 code | R-PDSO-G3 |
JESD-609 code | e3 |
Humidity sensitivity level | 1 |
Number of components | 1 |
Number of terminals | 3 |
Maximum operating temperature | 150 °C |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | SMALL OUTLINE |
Peak Reflow Temperature (Celsius) | 260 |
Polarity/channel type | PNP |
Certification status | Not Qualified |
surface mount | YES |
Terminal surface | Matte Tin (Sn) |
Terminal form | GULL WING |
Terminal location | DUAL |
Maximum time at peak reflow temperature | 40 |
transistor applications | SWITCHING |
Transistor component materials | SILICON |
Nominal transition frequency (fT) | 50 MHz |
VCEsat-Max | 1 V |
UFMMT6520 | FMMT6520TC | UFMMT6520TC | FMMT6520TA | UFMMT6520TA | |
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Description | Small Signal Bipolar Transistor, 0.5A I(C), 350V V(BR)CEO, 1-Element, PNP, Silicon | Small Signal Bipolar Transistor, 0.5A I(C), 350V V(BR)CEO, 1-Element, PNP, Silicon, | Small Signal Bipolar Transistor, 0.5A I(C), 350V V(BR)CEO, 1-Element, PNP, Silicon, | Small Signal Bipolar Transistor, 0.5A I(C), 350V V(BR)CEO, 1-Element, PNP, Silicon | Small Signal Bipolar Transistor, 0.5A I(C), 350V V(BR)CEO, 1-Element, PNP, Silicon, |
Is it Rohs certified? | conform to | conform to | conform to | conform to | conform to |
Maker | Zetex Semiconductors | Zetex Semiconductors | Zetex Semiconductors | Zetex Semiconductors | Zetex Semiconductors |
Reach Compliance Code | compliant | not_compliant | not_compliant | compliant | not_compliant |
ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
Maximum collector current (IC) | 0.5 A | 0.5 A | 0.5 A | 0.5 A | 0.5 A |
Collector-based maximum capacity | 6 pF | 6 pF | 6 pF | 6 pF | 6 pF |
Collector-emitter maximum voltage | 350 V | 350 V | 350 V | 350 V | 350 V |
Configuration | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
Minimum DC current gain (hFE) | 20 | 20 | 20 | 20 | 20 |
JESD-30 code | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 |
JESD-609 code | e3 | e3 | e3 | e3 | e3 |
Humidity sensitivity level | 1 | 1 | 1 | 1 | 1 |
Number of components | 1 | 1 | 1 | 1 | 1 |
Number of terminals | 3 | 3 | 3 | 3 | 3 |
Maximum operating temperature | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
Package form | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
Peak Reflow Temperature (Celsius) | 260 | 260 | 260 | 260 | 260 |
Polarity/channel type | PNP | PNP | PNP | PNP | PNP |
Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
surface mount | YES | YES | YES | YES | YES |
Terminal surface | Matte Tin (Sn) | MATTE TIN | MATTE TIN | Matte Tin (Sn) | MATTE TIN |
Terminal form | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING |
Terminal location | DUAL | DUAL | DUAL | DUAL | DUAL |
Maximum time at peak reflow temperature | 40 | 40 | 40 | 40 | 40 |
transistor applications | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
Transistor component materials | SILICON | SILICON | SILICON | SILICON | SILICON |
Nominal transition frequency (fT) | 50 MHz | 50 MHz | 50 MHz | 50 MHz | 50 MHz |
VCEsat-Max | 1 V | 1 V | 1 V | 1 V | 1 V |