Standard SRAM, 128KX8, 70ns, CMOS, CDIP32, 0.600 INCH, CERAMIC, SIDEBRAZED, DIP-32
| Parameter Name | Attribute value |
| Is it lead-free? | Contains lead |
| Is it Rohs certified? | incompatible |
| Maker | IDT (Integrated Device Technology) |
| package instruction | 0.600 INCH, CERAMIC, SIDEBRAZED, DIP-32 |
| Reach Compliance Code | not_compliant |
| Maximum access time | 70 ns |
| I/O type | COMMON |
| JESD-30 code | R-CDIP-T32 |
| JESD-609 code | e0 |
| memory density | 1048576 bit |
| Memory IC Type | STANDARD SRAM |
| memory width | 8 |
| Number of functions | 1 |
| Number of terminals | 32 |
| word count | 131072 words |
| character code | 128000 |
| Operating mode | ASYNCHRONOUS |
| Maximum operating temperature | 125 °C |
| Minimum operating temperature | -55 °C |
| organize | 128KX8 |
| Output characteristics | 3-STATE |
| Package body material | CERAMIC, METAL-SEALED COFIRED |
| encapsulated code | DIP |
| Encapsulate equivalent code | DIP32,.6 |
| Package shape | RECTANGULAR |
| Package form | IN-LINE |
| Parallel/Serial | PARALLEL |
| Peak Reflow Temperature (Celsius) | 225 |
| power supply | 5 V |
| Certification status | Not Qualified |
| Filter level | MIL-STD-883 Class B |
| Maximum standby current | 0.0002 A |
| Minimum standby current | 2 V |
| Maximum slew rate | 0.1 mA |
| Maximum supply voltage (Vsup) | 5.5 V |
| Minimum supply voltage (Vsup) | 4.5 V |
| Nominal supply voltage (Vsup) | 5 V |
| surface mount | NO |
| technology | CMOS |
| Temperature level | MILITARY |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE |
| Terminal pitch | 2.54 mm |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | 30 |
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