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IDT71T75802S200PFGI

Description
ZBT SRAM, 1MX18, 3.2ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, MO-136DJ, TQFP-100
Categorystorage    storage   
File Size392KB,23 Pages
ManufacturerIDT (Integrated Device Technology)
Environmental Compliance  
Download Datasheet Parametric View All

IDT71T75802S200PFGI Overview

ZBT SRAM, 1MX18, 3.2ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, MO-136DJ, TQFP-100

IDT71T75802S200PFGI Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerIDT (Integrated Device Technology)
Parts packaging codeQFP
package instructionLQFP, QFP100,.63X.87
Contacts100
Reach Compliance Codecompliant
ECCN code3A991.B.2.A
Maximum access time3.2 ns
Other featuresPIPELINED ARCHITECTURE
Maximum clock frequency (fCLK)200 MHz
I/O typeCOMMON
JESD-30 codeR-PQFP-G100
JESD-609 codee3
length20 mm
memory density18874368 bit
Memory IC TypeZBT SRAM
memory width18
Humidity sensitivity level3
Number of functions1
Number of terminals100
word count1048576 words
character code1000000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize1MX18
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeLQFP
Encapsulate equivalent codeQFP100,.63X.87
Package shapeRECTANGULAR
Package formFLATPACK, LOW PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
power supply2.5 V
Certification statusNot Qualified
Maximum seat height1.6 mm
Minimum standby current2.38 V
Maximum supply voltage (Vsup)2.625 V
Minimum supply voltage (Vsup)2.375 V
Nominal supply voltage (Vsup)2.5 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceMatte Tin (Sn) - annealed
Terminal formGULL WING
Terminal pitch0.65 mm
Terminal locationQUAD
Maximum time at peak reflow temperature30
width14 mm
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