Power Field-Effect Transistor
Parameter Name | Attribute value |
Is it Rohs certified? | conform to |
Maker | Nexperia |
package instruction | SMALL OUTLINE, R-PSSO-G2 |
Reach Compliance Code | not_compliant |
Other features | AVALANCHE RATED |
Avalanche Energy Efficiency Rating (Eas) | 655 mJ |
Shell connection | DRAIN |
Configuration | SINGLE WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage | 60 V |
Maximum drain current (ID) | 120 A |
Maximum drain-source on-resistance | 0.0025 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR |
JESD-30 code | R-PSSO-G2 |
JESD-609 code | e3 |
Humidity sensitivity level | 1 |
Number of components | 1 |
Number of terminals | 2 |
Operating mode | ENHANCEMENT MODE |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | SMALL OUTLINE |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
Polarity/channel type | N-CHANNEL |
Maximum pulsed drain current (IDM) | 1019 A |
Guideline | AEC-Q101; IEC-60134 |
surface mount | YES |
Terminal surface | Tin (Sn) |
Terminal form | GULL WING |
Terminal location | SINGLE |
Maximum time at peak reflow temperature | NOT SPECIFIED |
transistor applications | SWITCHING |
Transistor component materials | SILICON |