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P600M-GT3

Description
Rectifier Diode, 1 Phase, 1 Element, 6A, 1000V V(RRM), Silicon, PLASTIC, P-600, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size94KB,3 Pages
ManufacturerSangdest Microelectronics (Nanjing) Co., Ltd.
Environmental Compliance
Download Datasheet Parametric View All

P600M-GT3 Overview

Rectifier Diode, 1 Phase, 1 Element, 6A, 1000V V(RRM), Silicon, PLASTIC, P-600, 2 PIN

P600M-GT3 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSangdest Microelectronics (Nanjing) Co., Ltd.
package instructionO-PALF-W2
Reach Compliance Codeunknown
Other featuresHIGH RELIABILTY
applicationGENERAL PURPOSE
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeO-PALF-W2
Humidity sensitivity level1
Maximum non-repetitive peak forward current400 A
Number of components1
Phase1
Number of terminals2
Maximum output current6 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage1000 V
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED


  

Date Sheet 2564, Rev. -

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