AT28C16-20DI datasheet, PDF - EEWORLD Datasheet

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AT28C16-20DI: DescriptionEEPROM, 2KX8, 200ns, Parallel, CMOS, CDIP24, 0.600 INCH, CERDIP-24; Categorystorage storage; File Size57KB，2 Pages; ManufacturerAtmel (Microchip)

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AT28C16-20DI Overview

EEPROM, 2KX8, 200ns, Parallel, CMOS, CDIP24, 0.600 INCH, CERDIP-24

AT28C16-20DI Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Atmel (Microchip)
Parts packaging code	DIP
package instruction	0.600 INCH, CERDIP-24
Contacts	24
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum access time	200 ns
Other features	AUTOMATIC WRITE
command user interface	NO
Data polling	YES
Durability	10000 Write/Erase Cycles
JESD-30 code	R-GDIP-T24
JESD-609 code	e0
length	32.15 mm
memory density	16384 bit
Memory IC Type	EEPROM
memory width	8
Number of functions	1
Number of terminals	24
word count	2048 words
character code	2000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	2KX8
Output characteristics	3-STATE
Package body material	CERAMIC, GLASS-SEALED
encapsulated code	DIP
Encapsulate equivalent code	DIP24,.6
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	5 V
Programming voltage	5 V
Certification status	Not Qualified
Maximum seat height	5.72 mm
Maximum standby current	0.0001 A
Maximum slew rate	0.045 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
switch bit	NO
width	15.24 mm
Maximum write cycle time (tWC)	1 ms

AT28C16-20DI Related Products

	AT28C16-20DI	AT28C16-15DI	AT28C16-25LM/883	AT28C16-15LM/883	AT28C16-25DI	AT28C16-20LM/883
Description	EEPROM, 2KX8, 200ns, Parallel, CMOS, CDIP24, 0.600 INCH, CERDIP-24	EEPROM, 2KX8, 150ns, Parallel, CMOS, CDIP24, 0.600 INCH, CERDIP-24	EEPROM, 2KX8, 250ns, Parallel, CMOS, CQCC32, CERAMIC, LCC-32	EEPROM, 2KX8, 150ns, Parallel, CMOS, CQCC32, CERAMIC, LCC-32	EEPROM, 2KX8, 250ns, Parallel, CMOS, CDIP24, 0.600 INCH, CERDIP-24	EEPROM, 2KX8, 200ns, Parallel, CMOS, CQCC32, CERAMIC, LCC-32
Is it lead-free?	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Parts packaging code	DIP	DIP	QFJ	QFJ	DIP	QFJ
package instruction	0.600 INCH, CERDIP-24	0.600 INCH, CERDIP-24	QCCN, LCC32,.45X.55	QCCN, LCC32,.45X.55	DIP, DIP24,.6	QCCN, LCC32,.45X.55
Contacts	24	24	32	32	24	32
Reach Compliance Code	unknown	unknown	compliant	unknown	compliant	unknown
ECCN code	EAR99	EAR99	3A001.A.2.C	3A001.A.2.C	EAR99	3A001.A.2.C
Maximum access time	200 ns	150 ns	250 ns	150 ns	250 ns	200 ns
Other features	AUTOMATIC WRITE	AUTOMATIC WRITE	AUTOMATIC WRITE	AUTOMATIC WRITE	AUTOMATIC WRITE	AUTOMATIC WRITE
command user interface	NO	NO	NO	NO	NO	NO
Data polling	YES	YES	YES	YES	YES	YES
Durability	10000 Write/Erase Cycles	10000 Write/Erase Cycles	10000 Write/Erase Cycles	10000 Write/Erase Cycles	10000 Write/Erase Cycles	10000 Write/Erase Cycles
JESD-30 code	R-GDIP-T24	R-GDIP-T24	R-CQCC-N32	R-CQCC-N32	R-GDIP-T24	R-CQCC-N32
JESD-609 code	e0	e0	e0	e0	e0	e0
length	32.15 mm	32.15 mm	13.97 mm	13.97 mm	32.15 mm	13.97 mm
memory density	16384 bit	16384 bit	16384 bit	16384 bit	16384 bit	16384 bit
Memory IC Type	EEPROM	EEPROM	EEPROM	EEPROM	EEPROM	EEPROM
memory width	8	8	8	8	8	8
Number of functions	1	1	1	1	1	1
Number of terminals	24	24	32	32	24	32
word count	2048 words	2048 words	2048 words	2048 words	2048 words	2048 words
character code	2000	2000	2000	2000	2000	2000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	85 °C	85 °C	125 °C	125 °C	85 °C	125 °C
Minimum operating temperature	-40 °C	-40 °C	-55 °C	-55 °C	-40 °C	-55 °C
organize	2KX8	2KX8	2KX8	2KX8	2KX8	2KX8
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	CERAMIC, GLASS-SEALED	CERAMIC, GLASS-SEALED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, GLASS-SEALED	CERAMIC, METAL-SEALED COFIRED
encapsulated code	DIP	DIP	QCCN	QCCN	DIP	QCCN
Encapsulate equivalent code	DIP24,.6	DIP24,.6	LCC32,.45X.55	LCC32,.45X.55	DIP24,.6	LCC32,.45X.55
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE	CHIP CARRIER	CHIP CARRIER	IN-LINE	CHIP CARRIER
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
power supply	5 V	5 V	5 V	5 V	5 V	5 V
Programming voltage	5 V	5 V	5 V	5 V	5 V	5 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum seat height	5.72 mm	5.72 mm	2.54 mm	2.54 mm	5.72 mm	2.54 mm
Maximum standby current	0.0001 A	0.0001 A	0.0001 A	0.0001 A	0.0001 A	0.0001 A
Maximum slew rate	0.045 mA	0.045 mA	0.045 mA	0.045 mA	0.045 mA	0.045 mA
Maximum supply voltage (Vsup)	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V
Minimum supply voltage (Vsup)	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V
Nominal supply voltage (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V
surface mount	NO	NO	YES	YES	NO	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	INDUSTRIAL	INDUSTRIAL	MILITARY	MILITARY	INDUSTRIAL	MILITARY
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	THROUGH-HOLE	NO LEAD	NO LEAD	THROUGH-HOLE	NO LEAD
Terminal pitch	2.54 mm	2.54 mm	1.27 mm	1.27 mm	2.54 mm	1.27 mm
Terminal location	DUAL	DUAL	QUAD	QUAD	DUAL	QUAD
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
switch bit	NO	NO	NO	NO	NO	NO
width	15.24 mm	15.24 mm	11.43 mm	11.43 mm	15.24 mm	11.43 mm
Maximum write cycle time (tWC)	1 ms	1 ms	1 ms	1 ms	1 ms	1 ms
Base Number Matches	-	1	1	1	1	-

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