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K4S283233F-FE1L0

Description
Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, FBGA-90
Categorystorage    storage   
File Size141KB,12 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Download Datasheet Parametric View All

K4S283233F-FE1L0 Overview

Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, FBGA-90

K4S283233F-FE1L0 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSAMSUNG
Parts packaging codeBGA
package instructionTFBGA,
Contacts90
Reach Compliance Codecompliant
ECCN codeEAR99
access modeFOUR BANK PAGE BURST
Maximum access time7 ns
Other featuresAUTO/SELF REFRESH
JESD-30 codeR-PBGA-B90
length13 mm
memory density134217728 bit
Memory IC TypeSYNCHRONOUS DRAM
memory width32
Number of functions1
Number of ports1
Number of terminals90
word count4194304 words
character code4000000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-25 °C
organize4MX32
Package body materialPLASTIC/EPOXY
encapsulated codeTFBGA
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)240
Certification statusNot Qualified
Maximum seat height1.2 mm
self refreshYES
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelOTHER
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperature30
width8 mm

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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