P4SMA510AHE3_A/H datasheet, PDF

P4SMA510AHE3_A/H: DescriptionTrans Voltage Suppressor Diode, 300W, 434V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AC, SMA, 2 PIN; CategoryDiscrete semiconductor diode; File Size97KB，6 Pages; ManufacturerVishay; Websitehttp://www.vishay.com; Environmental Compliance

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P4SMA510AHE3_A/H Overview

Trans Voltage Suppressor Diode, 300W, 434V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AC, SMA, 2 PIN

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Vishay
package instruction	R-PDSO-C2
Reach Compliance Code	not_compliant
ECCN code	EAR99
Samacsys Description	ESD Suppressors / TVS Diodes 300W 510V 5% Unidir AEC-Q101 Qualified
Other features	EXCELLENT CLAMPING CAPABILITY
Maximum breakdown voltage	535 V
Minimum breakdown voltage	485 V
Breakdown voltage nominal value	510 V
Maximum clamping voltage	698 V
Configuration	SINGLE
Diode component materials	SILICON
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 code	DO-214AC
JESD-30 code	R-PDSO-C2
JESD-609 code	e3
Humidity sensitivity level	1
Maximum non-repetitive peak reverse power dissipation	300 W
Number of components	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-65 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
polarity	UNIDIRECTIONAL
Maximum power dissipation	3.3 W
Guideline	AEC-Q101
Maximum repetitive peak reverse voltage	434 V
surface mount	YES
technology	AVALANCHE
Terminal surface	Matte Tin (Sn)
Terminal form	C BEND
Terminal location	DUAL
Maximum time at peak reflow temperature	30

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