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P4KE82A

Description
400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-41
CategoryDiscrete semiconductor    diode   
File Size183KB,9 Pages
ManufacturerLRC
Websitehttp://www.lrc.cn
Environmental Compliance
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P4KE82A Overview

400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-41

P4KE82A Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerLRC
Reach Compliance Codeunknow
Breakdown voltage nominal value82 V
Maximum clamping voltage113 V
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
polarityUNIDIRECTIONAL
Maximum repetitive peak reverse voltage70.1 V
surface mountNO
P4KE**** Series
GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR
VOLTAGE - 6.8 TO 550 Volts
400Watt Peak Power
Feature
* Plastic package has Underwriters Laboratory
Flammability Classification 94V-O
* Glass passivated chip junction in DO-41 package
* 400W surge capability at 1ms
* Excellent clamping capability
* Low zener impedance
* Fast response time: typically less
than 1.0 ps from 0 volts to BV min
* Typical IR less than 1μA above 10V
* High temperature soldering guaranteed:
260 /10 seconds/.375”,(9.5mm) lead
length/5lbs., (2.3kg) tension
1.0 Watt Steady State
Mechanical Data
Case:
JEDEC DO-41 molded plastic
Terminals:
Axial leads, solderable per
MIL-STD-202, Method 208
Polarity:
Color band denoted cathode
except Bipolar
Mounting Position:
Any
Weight:
0.011 oz., 0.284 g
We declare that the material of product compliance
with ROHS requirements
DEVICES FOR BIPOLAR APPLICATIONS
For Bidirectional use C or CA Suffix for types P4KE6.8 thru types P4KE550
Electrical characteristics apply in both directions.marking code is all type.
1.Electrical Characteristic
Ratings at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Peak Power Dissipation at T
A
=25°C, T
P
=1ms(Note 1)
Steady State Power Dissipation at T
L
=75°C
Lead Lengths .375”,(9.5mm) (Note 2)
Peak Forward Surge Current, 8.3ms Single Half Sine-
Wave Superimposed on Rated Load(JECED Method) (Note 3)
Operating Temperature Range
Storage Temperature Range
NOTES:
1. Non-repetitive current pulse, per Fig. 3 and derated above TA=25°C per Fig. 2.
2. Mounted on Copper Leaf area of 1.57in
2
(40mm
2
).
3. 8.3ms single half sine-wave, duty cycle= 4 pulses per minutes maximum.
SYMBOL
P
PPM
P
M(AV)
I
FSM
T
J
T
STG
VALUE
Minimum 400
1.0
UNITS
Watts
Watts
40
-55 to +150
-55 to +175
Amps
°C
°C
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