IDT7MP4031S35Z datasheet, PDF - EEWORLD Datasheet

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IDT7MP4031S35Z: DescriptionSRAM Module, 16KX32, 35ns, CMOS; Categorystorage storage; File Size188KB，8 Pages; ManufacturerIDT (Integrated Device Technology)

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IDT7MP4031S35Z Overview

SRAM Module, 16KX32, 35ns, CMOS

IDT7MP4031S35Z Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	IDT (Integrated Device Technology)
Reach Compliance Code	not_compliant
ECCN code	EAR99
Maximum access time	35 ns
Other features	TTL COMPATIBLE INPUTS/OUTPUTS
I/O type	COMMON
JESD-30 code	R-XZMA-T64
JESD-609 code	e0
memory density	524288 bit
Memory IC Type	SRAM MODULE
memory width	32
Number of functions	1
Number of terminals	64
word count	16384 words
character code	16000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	16KX32
Output characteristics	3-STATE
Package body material	UNSPECIFIED
encapsulated code	ZIP
Encapsulate equivalent code	ZIP64/68,.1,.1
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	225
power supply	5 V
Certification status	Not Qualified
Maximum standby current	0.12 A
Minimum standby current	4.5 V
Maximum slew rate	1 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	1.27 mm
Terminal location	ZIG-ZAG
Maximum time at peak reflow temperature	30

IDT7MP4031S35Z Related Products

	IDT7MP4031S35Z	IDT7MP4031S25Z	IDT7MP4031B10Z	IDT7MP4031S20Z	IDT7MP4031B12Z	IDT7MP4031B8Z	IDT7MP4031B15Z
Description	SRAM Module, 16KX32, 35ns, CMOS	SRAM Module, 16KX32, 25ns, CMOS	SRAM Module, 16KX32, 10ns	SRAM Module, 16KX32, 20ns, CMOS	SRAM Module, 16KX32, 12ns	SRAM Module, 16KX32, 8ns	SRAM Module, 16KX32, 15ns
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Maker	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)
Reach Compliance Code	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant
ECCN code	EAR99	EAR99	3A991.B.2.B	3A991.B.2.B	3A991.B.2.B	3A991.B.2.B	3A991.B.2.B
Maximum access time	35 ns	25 ns	10 ns	20 ns	12 ns	8 ns	15 ns
Other features	TTL COMPATIBLE INPUTS/OUTPUTS	TTL COMPATIBLE INPUTS/OUTPUTS	TTL COMPATIBLE INPUTS/OUTPUTS	TTL COMPATIBLE INPUTS/OUTPUTS	TTL COMPATIBLE INPUTS/OUTPUTS	TTL COMPATIBLE INPUTS/OUTPUTS	TTL COMPATIBLE INPUTS/OUTPUTS
I/O type	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 code	R-XZMA-T64	R-XZMA-T64	R-XZMA-T64	R-XZMA-T64	R-XZMA-T64	R-XZMA-T64	R-XZMA-T64
JESD-609 code	e0	e0	e0	e0	e0	e0	e0
memory density	524288 bit	524288 bit	524288 bit	524288 bit	524288 bit	524288 bit	524288 bit
Memory IC Type	SRAM MODULE	SRAM MODULE	SRAM MODULE	SRAM MODULE	SRAM MODULE	SRAM MODULE	SRAM MODULE
memory width	32	32	32	32	32	32	32
Number of functions	1	1	1	1	1	1	1
Number of terminals	64	64	64	64	64	64	64
word count	16384 words	16384 words	16384 words	16384 words	16384 words	16384 words	16384 words
character code	16000	16000	16000	16000	16000	16000	16000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
organize	16KX32	16KX32	16KX32	16KX32	16KX32	16KX32	16KX32
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
encapsulated code	ZIP	ZIP	ZIP	ZIP	ZIP	ZIP	ZIP
Encapsulate equivalent code	ZIP64/68,.1,.1	ZIP64/68,.1,.1	ZIP64/68,.1,.1	ZIP64/68,.1,.1	ZIP64/68,.1,.1	ZIP64/68,.1,.1	ZIP64/68,.1,.1
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Peak Reflow Temperature (Celsius)	225	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
power supply	5 V	5 V	5 V	5 V	5 V	5 V	5 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum slew rate	1 mA	1.2 mA	1.6 mA	1.2 mA	1.6 mA	1.6 mA	1.6 mA
Maximum supply voltage (Vsup)	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V
Minimum supply voltage (Vsup)	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V
Nominal supply voltage (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V	5 V
surface mount	NO	NO	NO	NO	NO	NO	NO
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal pitch	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm
Terminal location	ZIG-ZAG	ZIG-ZAG	ZIG-ZAG	ZIG-ZAG	ZIG-ZAG	ZIG-ZAG	ZIG-ZAG
Maximum time at peak reflow temperature	30	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED

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