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M29W800DXB55N1

Description
512KX16 FLASH 3V PROM, 55ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48
Categorystorage    storage   
File Size663KB,41 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Download Datasheet Parametric View All

M29W800DXB55N1 Overview

512KX16 FLASH 3V PROM, 55ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48

M29W800DXB55N1 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSTMicroelectronics
Parts packaging codeTSOP
package instruction12 X 20 MM, PLASTIC, TSOP-48
Contacts48
Reach Compliance Codenot_compliant
ECCN codeEAR99
Maximum access time55 ns
Other featuresBOTTOM BOOT BLOCK
Spare memory width8
startup blockBOTTOM
command user interfaceYES
Universal Flash InterfaceYES
Data pollingYES
JESD-30 codeR-PDSO-G48
JESD-609 codee0
length18.4 mm
memory density8388608 bit
Memory IC TypeFLASH
memory width16
Number of functions1
Number of departments/size1,2,1,15
Number of terminals48
word count524288 words
character code512000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize512KX16
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP1
Encapsulate equivalent codeTSSOP48,.8,20
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply3/3.3 V
Programming voltage3 V
Certification statusNot Qualified
ready/busyYES
Maximum seat height1.2 mm
Department size16K,8K,32K,64K
Maximum standby current0.0001 A
Maximum slew rate0.02 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal pitch0.5 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
switch bitYES
typeNOR TYPE
width12 mm
M29W800DXT
M29W800DXB
8 Mbit (1Mb x8 or 512Kb x16, Boot Block)
3V Supply Flash Memory
OBSOLETE
FEATURES SUMMARY
s
SUPPLY VOLTAGE
– V
CC
= 2.7V to 3.6V for Program, Erase and
Read
s
s
Figure 1. Packages
ACCESS TIME: 45, 55, 70ns
PROGRAMMING TIME
– 10µs per Byte/Word typical
19 MEMORY BLOCKS
– 1 Boot Block (Top or Bottom Location)
– 2 Parameter and 16 Main Blocks
SO44 (M)
s
s
PROGRAM/ERASE CONTROLLER
– Embedded Byte/Word Program algorithms
ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
Erase Suspend
TSOP48 (N)
12 x 20mm
s
s
UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming
TEMPORARY BLOCK UNPROTECTION
MODE
COMMON FLASH INTERFACE
– 64 bit Security Code
s
FBGA
s
TFBGA48 (ZA)
8 x 6 ball array
s
LOW POWER CONSUMPTION
– Standby and Automatic Standby
100,000 PROGRAM/ERASE CYCLES per
BLOCK
ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– Top Device Code M29W800DXT: 22D7h
– Bottom Device Code M29W800DXB: 225Bh
s
s
November 2003
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