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SST26VF016-80-5I-S2AF

Description
16M X 1 FLASH 2.7V PROM, PDSO8, 0.200 INCH, ROHS COMPLIANT, SOIC-8
Categorystorage    storage   
File Size813KB,34 Pages
ManufacturerMicrochip
Websitehttps://www.microchip.com
Environmental Compliance  
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SST26VF016-80-5I-S2AF Overview

16M X 1 FLASH 2.7V PROM, PDSO8, 0.200 INCH, ROHS COMPLIANT, SOIC-8

SST26VF016-80-5I-S2AF Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerMicrochip
Parts packaging codeSOIC
package instruction0.200 INCH, ROHS COMPLIANT, SOIC-8
Contacts8
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum clock frequency (fCLK)80 MHz
JESD-30 codeS-PDSO-G8
JESD-609 codee4
length5.275 mm
memory density16777216 bit
Memory IC TypeFLASH
memory width1
Number of functions1
Number of terminals8
word count16777216 words
character code16000000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize16MX1
Package body materialPLASTIC/EPOXY
encapsulated codeSOP
Package shapeSQUARE
Package formSMALL OUTLINE
Parallel/SerialSERIAL
Peak Reflow Temperature (Celsius)260
Programming voltage2.7 V
Certification statusNot Qualified
Maximum seat height2.16 mm
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceNickel/Palladium/Gold (Ni/Pd/Au)
Terminal formGULL WING
Terminal pitch1.27 mm
Terminal locationDUAL
Maximum time at peak reflow temperature40
width5.275 mm
Serial Quad I/O (SQI) Flash Memory
SST26VF016 / SST26VF032
SST25VF016B16Mb Serial Peripheral Interface (SPI) flash memory
Advance Information
FEATURES:
• Single Voltage Read and Write Operations
– 2.7-3.6V
• Serial Interface Architecture
– Nibble-wide multiplexed I/O’s with SPI-like serial
command structure
- Mode 0 and Mode 3
– Single-bit, SPI backwards compatible
- Read, High-Speed Read, and JEDEC ID Read
• High Speed Clock Frequency
– 80 MHz
- 300 Mbit/s sustained data rate
• Burst Modes
– Continuous linear burst
– 8/16/32/64 Byte linear burst with wrap-around
• Index Jump
– Jump to address index within 256 Byte Page
– Jump to address index within 64 KByte Block
– Jump to address index to another 64 KByte Block
• Superior Reliability
– Endurance: 100,000 Cycles
– Greater than 100 years Data Retention
• Low Power Consumption:
– Active Read Current: 12 mA (typical @ 80 MHz)
– Standby Current: 8 µA (typical)
• Fast Erase and Byte-Program:
– Chip-Erase Time: 35 ms (typical)
– Sector-/Block-Erase Time: 18 ms (typical)
• Page-Program
– 256 Bytes per Page
– Fast Page Program time in 1 ms (typical)
• End-of-Write Detection
– Software polling the BUSY bit in Status Register
• Flexible Erase Capability
– Uniform 4 KByte sectors
– Four 8 KByte Top Parameter Overlay blocks
– Four 8 KByte Bottom Parameter Overlay blocks
– Two 32 KByte overlay blocks (one each top and
bottom)
– Uniform 64 KByte overlay blocks
- SST26VF016 – 30 blocks
- SST26VF032 – 62 blocks
• Write-Suspend
– Suspend Program or Erase operation to access
another block/sector
• Software Reset (RST) mode
• Software Write Protection
– Block-Locking
- 64 KByte blocks, two 32 KByte blocks, and
eight 8 KByte parameter blocks
• Security ID
– One-Time Programmable (OTP) 256 bit, Secure
ID
- 64 bit Unique, Factory Pre-Programmed iden-
tifier
- 192 bit User-Programmable
• Temperature Range
– Commercial: 0°C to +70°C
– Industrial: -40°C to +85°C
• Packages Available
– 8-contact WSON (6mm x 5mm)
– 8-lead SOIC (200 mil)
• All non-Pb (lead-free) devices are RoHS compliant
PRODUCT DESCRIPTION
The Serial Quad I/O™ (SQI™) family of 4-bit, multiplexed
I/O, serial-interface, flash-memory devices features a six-
wire, 4-bit I/O interface that allows for low-power, high-per-
formance operation in a low pin-count package, occupying
less board space and ultimately lowering total system
costs. All members of the 26 Series, SQI family are manu-
factured with SST proprietary, high-performance CMOS
SuperFlash® technology. The split-gate cell design and
thick-oxide tunneling injector attain better reliability and
manufacturability compared with alternate approaches.
The SST26VF016/032 significantly improve performance
and reliability, while lowering power consumption. These
devices write (Program or Erase) with a single power sup-
ply of 2.7-3.6V. The total energy consumed is a function of
the applied voltage, current, and time of application. Since
for any given voltage range, the SuperFlash technology
uses less current to program and has a shorter erase time,
the total energy consumed during any Erase or Program
operation is less than alternative flash memory technolo-
gies.
SST26VF016/032 are offered in both 8-contact WSON (6
mm x 5 mm), and 8-lead SOIC (200 mil) packages. See
Figure 2 for pin assignments.
©2008 Silicon Storage Technology, Inc.
S71359-00-000
04/08
1
The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.
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