AS8ERLC128K32SQ-300/Q datasheet, PDF

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AS8ERLC128K32SQ-300/Q: DescriptionEEPROM, 128KX32, 300ns, Parallel, CMOS, CQFP68, QFP-68; Categorystorage storage; File Size454KB，19 Pages; ManufacturerMicross; Websitehttps://www.micross.com

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AS8ERLC128K32SQ-300/Q Overview

EEPROM, 128KX32, 300ns, Parallel, CMOS, CQFP68, QFP-68

AS8ERLC128K32SQ-300/Q Parametric

Parameter Name	Attribute value
Maker	Micross
Parts packaging code	QFP
package instruction	QFP,
Contacts	68
Reach Compliance Code	unknown
ECCN code	3A001.A.2.C
Maximum access time	300 ns
JESD-30 code	S-CQFP-G68
JESD-609 code	e4
length	22.352 mm
memory density	4194304 bit
Memory IC Type	EEPROM
memory width	32
Number of functions	1
Number of terminals	68
word count	131072 words
character code	128000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	128KX32
Package body material	CERAMIC, METAL-SEALED COFIRED
encapsulated code	QFP
Package shape	SQUARE
Package form	FLATPACK
Parallel/Serial	PARALLEL
Programming voltage	3 V
Certification status	Not Qualified
Filter level	MIL-PRF-38534 Class H
Maximum seat height	5.969 mm
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	MILITARY
Terminal surface	PALLADIUM GOLD
Terminal form	GULL WING
Terminal pitch	1.27 mm
Terminal location	QUAD
width	22.352 mm

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EEPROM

AS8ERLC128K32

PIN ASSIGNMENT

128K x 32 Radiation Tolerant EEPROM

AVAILABLE AS MILITARY

SPECIFICATIONS

•

MIL-PRF-38534

(Top View)

68 Lead CQFP

I/O0

I/O1

I/O2

I/O3

I/O4

I/O5

I/O6

I/O7

GND

I/O8

I/O9

I/O10

I/O11

I/O12

I/O13

I/O14

I/O15

9 8 7 6 5 4 3 2 1 68 67 66 65 64 63 62 61

27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43

Vcc

A11

A12

A13

*A15

*A14

A16

CS1\

OE\

CS2\

WE2\

WE3\

WE4\

RDY

RES\

CS3\

GND

CS4\

WE1\

A10

Vcc

I/O16

I/O17

I/O18

I/O19

I/O20

I/O21

I/O22

I/O23

GND

I/O24

I/O25

I/O26

I/O27

I/O28

I/O29

I/O30

I/O31

FEATURES

•

Access time of 250ns , 300ns

• Operation with single

3.3V (+ .3V)

supply

• LOW Power Dissipation:

Active(Worst case):

300mW

(MAX), Max Speed Operation

Standby(Worst case):

7.2mW(MAX),

Battery Back-up Mode

• Automatic Byte Write: 15 ms (MAX)

• Automatic Page Write (128 bytes): 15 ms (MAX)

• Data protection circuit on power -on/off

• Low power CMOS MNOS cell Technology

• 10

Erase/Write cycles (in Page Mode)

• Software data protection

• TTL Compatible Inputs and Outputs

• Data Retention: 10 years

• Ready/Busy\ and Data Polling Signals

• Write protection by RES\ pin

• Radiation Tolerant: Proven total dose 40K to 100K RADS*

• Shielded Package for Best Radiation Immunity

• Operating Temperature Ranges:

Military: -55

C to +125

Industrial: -40

C to +85

*Pin #'s 31 and 32, A15 and A14 respectively, are reversed from the AS8E128K32. Correct use

of these address lines is required for operation of the SDP mode to work properly.

PIN NAME

A0 to A16

I/O0 to I/O31

OE\

CE\

WE\

FUNCTION

Address Input

FUNCTION

Data

FUNCTION

Input/Output

Output Enable

FUNCTION

Chip Enable

Write Enable

FUNCTION

Power Supply

FUNCTION

OPTIONS

• Timing

250 ns

300 ns

• Package

Ceramic Quad Flat pack w/ formed leads

Ceramic Quad Flat pack w/ tie bar

Shielded Ceramic Quad Flat pack

MARKINGS

-250

-300

SQB

No. 703Q

No. 703QB

No. 703SF

No. 703SQB

Ground

FUNCTION

RDY/BUSY\ Ready Busy

RES\

Reset

GENERAL DESCRIPTION

The AS8ERLC128K32 is a 4 Megabit Radiation Tolerant

EEPROM Module organized as 128K x 32 bit. User conﬁgurable to

256K x16 or 512Kx 8. The module achieves high speed access, low

power consumption and high reliability by employing advanced CMOS

memory technology.

The military grade product is manufactured in compliance to MIL-

STD 883, making the AS8ERLC128K32 ideally suited for military or

space applications.

The module is offered as a 68 lead 0.880 inch square ceramic

quad

ﬂ

at pack. It has a max. height of 0.200 inch (non-shielded). This

package design is targeted for those applications which require low

proﬁle SMT Packaging.

* Contact factory for more information. 2-sided shielding provided via Tungsten

lids on both sides. 6.5X typ. TID boost due to shielding. (Geostationary orbit)

Proven total dose 40K to 100K RADS. Micross can perform TID lot testing.

AS8ERLC128K32

Rev. 2.1 11/10

RDY/ BUSY\

RES\

FUNCTIONAL BLOCK DIAGRAM

For more products and information

please visit our web site at

www.micross.com

Micross Components reserves the right to change products or speciﬁcations without notice.

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