AUTOMOTIVE GRADE
PD - 97586
Features
●
●
●
●
●
●
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HEXFET
®
Power MOSFET
D
AUIRFR48Z
V
(BR)DSS
R
DS(on)
max.
I
D (Silicon Limited)
55V
11m
Ω
62A
42A
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
G
S
I
D (Package Limited)
D
S
Description
Specifically designed for Automotive applications,
this HEXFET
®
Power MOSFET utilizes the latest
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of this
design are a 175°C junction operating temperature,
fast switching speed and improved repetitive ava-
lanche rating . These features combine to make this
design an extremely efficient and reliable device for
use in Automotive applications and a wide variety of
other applications.
D-Pak
AUIRFR48Z
G
D
S
G
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (T
A
) is 25°C, unless otherwise specified.
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
E
AS
(tested )
I
AR
E
AR
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
(Silicon Limited)
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
(Package Limited)
Pulsed Drain Current
Max.
62
44
42
250
91
0.61
± 20
74
110
See Fig.12a, 12b, 15, 16
-55 to + 175
Units
A
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
W
W/°C
V
mJ
A
mJ
°C
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Ã
h
d
g
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case )
Thermal Resistance
R
θJC
R
θJA
R
θJA
300
Junction-to-Case
Junction-to-Ambient (PCB mount)
Junction-to-Ambient
j
Parameter
Typ.
–––
–––
–––
Max.
1.64
40
110
Units
°C/W
i
HEXFET
®
is a registered trademark of International Rectifier.
*Qualification
standards can be found at http://www.irf.com/
www.irf.com
1
11/9/2010
AUIRFR48Z
Static Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
R
DS(on)
V
GS(th)
gfs
I
DSS
I
GSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
55
–––
–––
2.0
120
–––
–––
–––
–––
–––
0.054
8.86
–––
–––
–––
–––
–––
–––
–––
–––
11
4.0
–––
20
250
200
-200
Conditions
V V
GS
= 0V, I
D
= 250µA
V/°C Reference to 25°C, I
D
= 1mA
mΩ V
GS
= 10V, I
D
= 37A
V V
DS
= V
GS
, I
D
= 50µA
S V
DS
= 25V, I
D
= 37A
µA V
DS
= 55V, V
GS
= 0V
V
DS
= 55V, V
GS
= 0V, T
J
= 125°C
nA V
GS
= 20V
V
GS
= -20V
e
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
40
11
15
15
61
40
35
4.5
7.5
1720
290
160
1000
230
360
60
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
nC
Conditions
I
D
= 37A
V
DS
= 44V
V
GS
= 10V
V
DD
= 28V
I
D
= 37A
R
G
= 12
Ω
V
GS
= 10V
Between lead,
e
e
ns
D
nH
6mm (0.25in.)
from package
G
pF
S
and center of die contact
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 44V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 44V
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
f
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
20
14
37
A
250
1.3
40
28
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 37A, V
GS
= 0V
T
J
= 25°C, I
F
= 37A, V
DD
= 28V
di/dt = 100A/µs
Ã
e
e
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by T
Jmax
, starting T
J
= 25°C, L = 0.11mH
R
G
= 25Ω, I
AS
= 37A, V
GS
=10V. Part not
recommended for use above this value.
Pulse width
≤
1.0ms; duty cycle
≤
2%.
C
oss
eff. is a fixed capacitance that gives the same
charging time as C
oss
while V
DS
is rising from 0 to
80% V
DSS
.
Limited by T
Jmax
, see Fig.12a, 12b, 15, 16 for typical
repetitive avalanche performance.
This value determined from sample failure population,
starting T
J
= 25°C, L = 0.11mH, R
G
= 25Ω,
I
AS
= 37A, V
GS
=10V.
When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques
refer to application note #AN-994.
R
θ
is measured at T
J
approximately 90°C.
2
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AUIRFR48Z
Qualification Information
†
Automotive
(per AEC-Q101)
Qualification Level
††
Comments: This part number(s) passed Automotive qualification.
IR’s Industrial and Consumer qualification level is granted by
extension of the higher Automotive level.
D-PAK
MSL1
Class M4 (425V)
AEC-Q101-002
Class H1B (1000V)
AEC-Q101-001
Class C5 (1125V)
AEC-Q101-005
Yes
Moisture Sensitivity Level
Machine Model
Human Body Model
Charged Device
Model
RoHS Compliant
ESD
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions to AEC-Q101 requirements are noted in the qualification report.
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3
AUIRFR48Z
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
4.5V
10
10
4.5V
≤
60µs PULSE WIDTH
1
0.1
1
Tj = 25°C
≤60µs
PULSE WIDTH
1
Tj = 175°C
0.1
1
10
100
10
100
V DS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
Gfs , Forward Transconductance (S)
60
50
40
30
20
10
0
0
20
40
60
80
ID,Drain-to-Source Current (A)
TJ = 175°C
TJ = 25°C
ID, Drain-to-Source Current
(Α)
100
T J = 175°C
10
1
T J = 25°C
VDS = 25V
≤60µs
PULSE WIDTH
2
4
6
8
10
12
VDS = 10V
380µs PULSE WIDTH
0.1
VGS, Gate-to-Source Voltage (V)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Typical Forward Transconductance
vs. Drain Current
4
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AUIRFR48Z
10000
VGS, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
20
ID= 37A
VDS= 44V
VDS= 28V
VDS= 11V
16
C, Capacitance(pF)
Ciss
1000
12
Coss
Crss
8
4
0
100
1
10
100
0
10
20
30
40
50
60
VDS, Drain-to-Source Voltage (V)
QG Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs.
Gate-to-Source Voltage
1000.00
ID, Drain-to-Source Current (A)
1000
ISD, Reverse Drain Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS (on)
100.00
TJ = 175°C
10.00
100
100µsec
10
1msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
VDS , Drain-toSource Voltage (V)
100
10msec
1.00
TJ = 25°C
VGS = 0V
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
VSD, Source-to-Drain Voltage (V)
DC
0.10
nce
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
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