V23990-P541-*2*-PM
flow
PIM 0
Features
● Clip-in housing
● Trench Fieldstop IGBT's for low saturation losses
● Optional w/o BRC
600V/6A
flowPIM 0 housing
Target Applications
● Industrial drives
● Embedded drives
17mm housing
12mm housing
Schematic
Types
● V23990-P541-A28-PM
● V23990-P541-A29-PM
● V23990-P541-C28-PM
● V23990-P541-C29-PM
Maximum Ratings
T
j
=25°C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Input Rectifier Diode
Repetitive peak reverse voltage
DC forward current
Surge forward current
I2t-value
Power dissipation per Diode
Maximum Junction Temperature
V
RRM
I
FAV
I
FSM
I
2
t
P
tot
T
j
max
T
j
=T
j
max
t
p
=10ms
50 Hz half sine wave
T
j
=T
j
max
T
h
=80°C
T
c
=80°C
T
j
=25°C
200
T
h
=80°C
T
c
=80°C
33
50
150
A
2
s
W
°C
1600
28
37
200
V
A
A
Inverter Transistor
Collector-emitter break down voltage
DC collector current
Repetitive peak collector current
Turn off safe operating area
Power dissipation per IGBT
Gate-emitter peak voltage
Short circuit ratings
Maximum Junction Temperature
P
tot
V
GE
t
SC
V
CC
T
j
max
T
j
≤150°C
V
GE
=15V
V
CE
I
C
I
Cpulse
T
j
=T
j
max
t
p
limited by T
j
max
VCE ≤ 1200V, Tj ≤ Top max
T
j
=T
j
max
T
h
=80°C
T
c
=80°C
T
h
=80°C
T
c
=80°C
600
12
12
18
18
34
52
±20
6
360
175
V
A
A
A
W
V
µs
V
°C
copyright Vincotech
1
Revision: 4
V23990-P541-*2*-PM
Maximum Ratings
T
j
=25° unless otherwise specified
C,
Parameter
Symbol
Condition
Value
Unit
Inverter Diode
Peak Repetitive Reverse Voltage
DC forward current
Repetitive peak forward current
Power dissipation per Diode
Maximum Junction Temperature
V
RRM
I
F
I
FRM
P
tot
T
j
max
T
j
=T
j
max
t
p
limited by T
j
max
T
j
=T
j
max
T
h
=80°
C
C
T
c
=80°
T
h
=80°
C
T
c
=80°
C
600
12
12
12
26
39
175
V
A
A
W
°
C
Brake Transistor
Collector-emitter break down voltage
DC collector current
Repetitive peak collector current
Turn off safe operating area
Power dissipation per IGBT
Gate-emitter peak voltage
Short circuit ratings
Maximum Junction Temperature
P
tot
V
GE
t
SC
V
CC
T
j
max
T
j
≤150°
C
V
GE
=15V
V
CE
I
C
I
Cpuls
T
j
=T
j
max
t
p
limited by T
j
max
VCE
≤
1200V, Tj
≤
Top max
T
j
=T
j
max
T
h
=80°
C
T
c
=80°
C
T
h
=80°
C
C
T
c
=80°
600
11
12
18
18
31
47
±20
6
360
175
V
A
A
A
W
V
µs
V
°
C
Brake Diode
Peak Repetitive Reverse Voltage
DC forward current
Repetitive peak forward current
Power dissipation per Diode
Maximum Junction Temperature
V
RRM
I
F
I
FRM
P
tot
T
j
max
T
j
=T
j
max
t
p
limited by T
j
max
T
j
=T
j
max
T
h
=80°
C
T
c
=80°
C
C
T
h
=80°
C
T
c
=80°
600
11
12
12
23
35
175
V
A
A
W
°
C
Thermal Properties
Storage temperature
Operation temperature under switching condition
T
stg
T
op
-40…+125
-40…+(Tjmax - 25)
°
C
°
C
Insulation Properties
Insulation voltage
Creepage distance
Clearance
Comparative tracking index
CTI
V
is
t=2s
DC voltage
4000
min 12,7
min 12,7
>200
V
mm
mm
copyright Vincotech
2
Revision: 4
V23990-P541-*2*-PM
Characteristic Values
Parameter
Symbol
V
GE
[V] or
V
GS
[V]
Conditions
V
r
[V] or
V
CE
[V] or
V
DS
[V]
I
C
[A] or
I
F
[A] or
I
D
[A]
T
j
Min
Value
Typ
Max
Unit
Input Rectifier Diode
Forward voltage
Threshold voltage (for power loss calc. only)
Slope resistance (for power loss calc. only)
Reverse current
Thermal resistance chip to heatsink per chip
V
F
V
to
r
t
I
r
R
thJH
Thermal grease
thickness≤50µm
λ
= 1 W/mK
1500
30
30
30
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=145°
C
0,8
1,26
1,24
0,92
0,82
11
14
1,45
V
V
m
1,1
mA
K/W
2,10
Inverter Transistor
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Thermal resistance chip to heatsink per chip
V
GE(th)
V
CE(sat)
I
CES
I
GES
R
gint
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
C
oss
C
rss
Q
Gate
R
thJH
Thermal grease
thickness≤50µm
λ
= 1 W/mK
±15
480
6
C
Tj=25°
f=1MHz
0
25
Tj=25°
C
Rgoff=16
Rgon=32
±15
300
6
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=150°
C
V
CE
=V
GE
15
0
20
600
0
0,00009
6
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=150°
C
5
1
5,8
1,52
1,7
6,5
2,1
0,06
350
V
V
mA
nA
none
12
10
8
11
118
134
87
116
0,07
0,10
0,15
0,19
ns
mWs
368
28
11
42
2,78
nC
K/W
pF
Inverter Diode
Diode forward voltage
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
Thermal resistance chip to heatsink per chip
V
F
I
RRM
t
rr
Q
rr
di(rec)max
/dt
6
Rgon=32
300
6
Erec
R
thJH
Thermal grease
thickness≤50µm
λ
= 1 W/mK
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=150°
C
1
1,64
1,56
8
8
73
163
0,23
0,43
569
338
0,04
0,09
2,5
V
A
ns
µC
A/µs
mWs
K/W
3,68
copyright Vincotech
3
Revision: 4
V23990-P541-*2*-PM
Characteristic Values
Parameter
Symbol
V
GE
[V] or
V
GS
[V]
Conditions
V
r
[V] or
V
CE
[V] or
V
DS
[V]
I
C
[A] or
I
F
[A] or
I
D
[A]
T
j
Min
Value
Typ
Max
Unit
Brake Transistor
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off incl diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Thermal resistance chip to heatsink per chip
V
GE(th)
V
CE(sat)
I
CES
I
GES
R
gint
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
C
oss
C
rss
Q
Gate
R
thJH
Thermal grease
thickness≤50µm
λ
= 1 W/mK
±15
480
6
Tj=25°
C
f=1MHz
0
25
Tj=25°
C
Rgoff=16
Rgon=32
±15
300
6
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=150°
C
V
CE
=V
GE
15
0
20
600
0
0,00009
30
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=150°
C
5
1
5,8
1,54
1,72
6,5
2,1
0,06
350
V
V
mA
nA
none
11
11
8
11
112
127
87
100
0,08
0,11
0,14
0,17
ns
mWs
368
28
11
42
3,06
nC
K/W
pF
Brake Diode
Diode forward voltage
Reverse leakage current
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovery energy
Thermal resistance chip to heatsink per chip
V
F
I
r
I
RRM
t
rr
Q
rr
di(rec)max
/dt
6
Rgon=32
600
Rgon=32
±15
300
6
E
rec
R
thJH
Thermal grease
thickness≤50µm
λ
= 1 W/mK
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=150°
C
1
1,63
1,56
7
7
96
165
0,23
0,23
442
268
0,04
0,09
2,5
60
V
µA
A
ns
µC
A/µs
mWs
K/W
4,09
Thermistor
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
B-value
Vincotech NTC Reference
B
(25/50)
B
(25/100)
Tol. ±3%
Tol. ±3%
R
∆R/R
P
R100=1486
Tj=25°
C
Tc=100°
C
Tc=100°
C
Tj=25°
C
C
Tj=25°
Tj=25°
C
Tj=25°
C
4000
A
-5
210
3,5
22000
5
%
mW
mW/K
K
K
copyright Vincotech
4
Revision: 4
V23990-P541-*2*-PM
Output Inverter
Figure 1
Typical output characteristics
I
C
= f(V
CE
)
30
I
C
(A)
Output inverter IGBT
Figure 2
Typical output characteristics
I
C
= f(V
CE
)
30
I
C
(A)
Output inverter IGBT
25
25
20
20
15
15
10
10
5
5
0
0
1
2
3
V
CE
(V)
4
0
0
1
2
3
4
V
CE
(V)
5
At
t
p
=
T
j
=
V
GE
from
µs
250
25
°
C
7 V to 17 V in steps of 1 V
At
t
p
=
T
j
=
V
GE
from
250
µs
125
°
C
7 V to 17 V in steps of 1 V
Figure 3
Typical transfer characteristics
I
C
= f(V
GE
)
7
I
C
(A)
Output inverter IGBT
Figure 4
Typical diode forward current as
a function of forward voltage
I
F
= f(V
F
)
10
I
F
(A)
Output inverter FWD
6
8
5
4
6
3
4
2
2
1
T
j
= T
jmax
-25°
C
T
j
= 25°
C
T
j
= T
jmax
-25°
C
0
0
2
4
6
8
T
j
= 25°
C
0
10
V
GE
(V)
12
0,0
0,5
1,0
1,5
2,0
2,5
V
F
(V)
3,0
At
t
p
=
V
CE
=
250
10
µs
V
At
t
p
=
250
µs
copyright Vincotech
5
Revision:4
LED Zone
京公网安备 11010802033920号
EEWORLD
