Memory Circuit, Flash+SRAM, 2MX16, CMOS, PBGA56, 7 X 9 MM, 1.20 MM HEIGHT, LEAD FREE, HALOGEN FREE, FBGA-56
| Parameter Name | Attribute value |
| Is it Rohs certified? | conform to |
| Maker | Cypress Semiconductor |
| package instruction | 7 X 9 MM, 1.20 MM HEIGHT, LEAD FREE, HALOGEN FREE, FBGA-56 |
| Reach Compliance Code | compliant |
| Maximum access time | 90 ns |
| Other features | PSRAM IS ORGANIZED AS 1M X 16 |
| JESD-30 code | R-PBGA-B56 |
| JESD-609 code | e1 |
| length | 9 mm |
| memory density | 33554432 bit |
| Memory IC Type | MEMORY CIRCUIT |
| memory width | 16 |
| Mixed memory types | FLASH+SRAM |
| Humidity sensitivity level | 3 |
| Number of functions | 1 |
| Number of terminals | 56 |
| word count | 2097152 words |
| character code | 2000000 |
| Operating mode | ASYNCHRONOUS |
| Maximum operating temperature | 85 °C |
| Minimum operating temperature | -25 °C |
| organize | 2MX16 |
| Package body material | PLASTIC/EPOXY |
| encapsulated code | TFBGA |
| Encapsulate equivalent code | BGA56,8X8,32 |
| Package shape | RECTANGULAR |
| Package form | GRID ARRAY, THIN PROFILE, FINE PITCH |
| power supply | 3 V |
| Certification status | Not Qualified |
| Maximum seat height | 1.2 mm |
| Maximum supply voltage (Vsup) | 3.1 V |
| Minimum supply voltage (Vsup) | 2.7 V |
| Nominal supply voltage (Vsup) | 3 V |
| surface mount | YES |
| technology | CMOS |
| Temperature level | OTHER |
| Terminal surface | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) |
| Terminal form | BALL |
| Terminal pitch | 0.8 mm |
| Terminal location | BOTTOM |
| width | 7 mm |
EEWorld
subscription
account
EEWorld
service
account
Automotive
development
circle
京公网安备 11010802033920号
EEWORLD