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M58WR064FT80ZB6

Description
Flash, 4MX16, 80ns, PBGA56, 7.70 X 9 MM, 0.75 MM PITCH, VFBGA-56
Categorystorage    storage   
File Size1MB,87 Pages
ManufacturerNumonyx ( Micron )
Websitehttps://www.micron.com
Download Datasheet Parametric View All

M58WR064FT80ZB6 Overview

Flash, 4MX16, 80ns, PBGA56, 7.70 X 9 MM, 0.75 MM PITCH, VFBGA-56

M58WR064FT80ZB6 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerNumonyx ( Micron )
Parts packaging codeBGA
package instructionVFBGA,
Contacts56
Reach Compliance Codenot_compliant
ECCN code3A991.B.1.A
Maximum access time80 ns
Other featuresSYNCHRONOUS BURST MODE OPERATION POSSIBLE
startup blockTOP
JESD-30 codeR-PBGA-B56
JESD-609 codee0
length9 mm
memory density67108864 bit
Memory IC TypeFLASH
memory width16
Number of functions1
Number of terminals56
word count4194304 words
character code4000000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize4MX16
Package body materialPLASTIC/EPOXY
encapsulated codeVFBGA
Package shapeRECTANGULAR
Package formGRID ARRAY, VERY THIN PROFILE, FINE PITCH
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Programming voltage1.8 V
Certification statusNot Qualified
Maximum seat height1 mm
Maximum supply voltage (Vsup)2 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTin/Lead (Sn63Pb37)
Terminal formBALL
Terminal pitch0.75 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
typeNOR TYPE
width7.7 mm
M58WR064FT
M58WR064FB
64 Mbit (4Mb x16, Multiple Bank, Burst)
1.8V Supply Flash Memory
FEATURES SUMMARY
SUPPLY VOLTAGE
– V
DD
= 1.7V to 2V for Program, Erase and
Read
– V
DDQ
= 1.7V to 2.24V for I/O Buffers
– V
PP
= 12V for fast Program (optional)
SYNCHRONOUS / ASYNCHRONOUS READ
– Synchronous Burst Read mode: 66MHz
– Asynchronous/ Synchronous Page Read
mode
– Random Access: 60ns, 70ns, 80ns
SYNCHRONOUS BURST READ SUSPEND
PROGRAMMING TIME
– 8µs by Word typical for Fast Factory
Program
– Double/Quadruple Word Program option
– Enhanced Factory Program options
MEMORY BLOCKS
– Multiple Bank Memory Array: 4 Mbit
Banks
– Parameter Blocks (Top or Bottom
location)
DUAL OPERATIONS
– Program Erase in one Bank while Read in
others
– No delay between Read and Write
operations
BLOCK LOCKING
– All blocks locked at Power up
– Any combination of blocks can be locked
– WP for Block Lock-Down
SECURITY
– 128 bit user programmable OTP cells
– 64 bit unique device number
COMMON FLASH INTERFACE (CFI)
100,000 PROGRAM/ERASE CYCLES per
BLOCK
Figure 1. Package
FBGA
VFBGA56 (ZB)
7.7 x 9 mm
ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Codes:
M58WR064FT (Top): 8810h
M58WR064FB (Bottom): 8811h
PACKAGE
– Compliant with Lead-Free Soldering
Processes
– Lead-Free Versions
October 2004
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