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V23990-P848-C58-PM

Description
Output Inverter Application
CategoryDiscrete semiconductor    The transistor   
File Size2MB,22 Pages
ManufacturerVincotech
Websitehttps://www.vincotech.com/
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V23990-P848-C58-PM Overview

Output Inverter Application

V23990-P848-C58-PM Parametric

Parameter NameAttribute value
MakerVincotech
Reach Compliance Codecompli
V23990-P848-A58/A59/C58/C59-PM
preliminary datasheet
flowPIM 2 3rd
Features
2 Clips housing in 12 and 17mm height
Trench Fieldstop Technology IGBT4
Optional w/o BRC
1200V/4A
flow0 Housing
Target Applications
Industrial Drives
Embedded Generation
Schematics
Types
V23990-P848-A58-PM 12mm height
V23990-P848-A59-PM 17mm height
● V23990-P848-C58-PM 12mm height; w/o BRC
● V23990-P848-C59-PM 17mm height; w/o BRC
Maximum Ratings
Tj=25°C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Input Rectifier Diode
Repetitive peak reverse voltage
Forward current per diode
Surge forward current
I2t-value
Power dissipation per Diode
Maximum Junction Temperature
V
RRM
I
FAV
I
FSM
t
p
=10ms
It
P
tot
T
j
max
T
j
=T
j
max
T
h
=80°
C
T
c
=80°
C
2
1600
DC current
T
h
=80°
C
T
c
=80°
C
30
V
A
A
A
2
s
W
°
C
370
T
j
=25°
C
680
42
150
Inverter Transistor
Collector-emitter break down voltage
DC collector current
Repetitive peak collector current
Power dissipation per IGBT
Gate-emitter peak voltage
Short circuit ratings
Maximum Junction Temperature
V
CE
I
C
I
Cpulse
P
tot
V
GE
t
SC
V
CC
T
j
max
T
j
≤150°
C
V
GE
=15V
T
j
=T
j
max
t
p
limited by T
j
max
T
j
=T
j
max
T
h
=80°
C
T
c
=80°
C
T
h
=80°
C
T
c
=80°
C
T
h
=80°
C
T
c
=80°
C
1200
9
12
38
V
A
A
W
V
µs
V
°
C
±20
10
800
175
copyright Vincotech
1
Revision: 1

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