GI850 thru GI858
Vishay General Semiconductor
Fast Switching Plastic Rectifier
Major Ratings and Characteristics
I
F(AV)
V
RRM
I
FSM
t
rr
I
R
V
F
T
j
max.
3.0 A
50 V to 800 V
100 A
200 ns
10 µA
1.25 V
150 °C
DO-201AD
Features
•
•
•
•
•
Fast switching for high efficiency
Low forward voltage drop
Low leakage current
High forward surge capability
Solder Dip 260 °C, 40 seconds
Mechanical Data
Case:
DO-201AD, molded epoxy body
Epoxy meets UL-94V-0 Flammability rating
Terminals:
Matte tin plated (E3 Suffix) leads, solder-
able per J-STD-002B and JESD22-B102D
Polarity:
Color band denotes cathode end
Typical Applications
For use in fast switching rectification of power supply,
inverters, converters and freewheeling diodes for
consumer and Telecommunication.
(Note: These devices are not Q101 qualified. There-
fore, the devices specified in this datasheet have not
been designed for use in automotive or Hi-Rel appli-
cations.)
Maximum Ratings
(T
A
= 25 °C unless otherwise noted)
Parameter
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum non-repetitive peak reverse voltage
Maximum average forward rectified current 0.375"
(9.5 mm) lead length at T
A
= 90 °C
Peak forward surge current 8.3 ms single half sine-
wave superimposed on rated load
Operating junction and storage temperature range
Symbol
V
RRM
V
RMS
V
DC
V
RSM
I
F(AV)
I
FSM
T
J
, T
STG
GI850
50
35
50
75
GI851
100
70
100
150
GI852
200
140
200
250
3.0
100
- 50 to + 150
GI854
400
280
400
450
GI856
600
420
600
650
GI858
800
560
800
880
Unit
V
V
V
V
A
A
°C
Document Number 88630
10-Oct-05
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1
GI850 thru GI858
Vishay General Semiconductor
Electrical Characteristics
(T
A
= 25 °C unless otherwise noted)
Parameter
Maximum
instantaneous
forward voltage
Maximum DC reverse
current at rated DC
blocking voltage
Maximum reverse
recovery time
Maximum reverse
recovery time
Typical junction
capacitance
Test condition
at 3.0 A
at 9.4 A, T
J
= 175 °C
T
A
= 25 °C
T
A
= 100 °C
at I
F
= 1.0 A, V
R
= 30 V,
di/dt = 50 A/µs,
I
rr
= 10 % I
RM
at I
F
= 1.0 A, V
R
= 30 V,
di/dt = 50 A/µs,
I
rr
= 10 % I
RM
at 4.0 V, 1 MHz
Symbol
V
F
GI850
GI851
GI852
GI854
GI856
GI858
Unit
V
1.25
1.10
10
150
t
rr
150
200
200
250
300
500
ns
I
R
µA
I
RM(REC)
2.0
A
C
J
28
pF
Thermal Characteristics
(T
A
= 25 °C unless otherwise noted)
Parameter
Typical thermal
Notes:
(1) Thermal resistance from junction to ambient and from junction to lead at 0.375" (9.5 mm) lead length, with both leads equally heat sink
resistance
(1)
Symbol
R
θJA
R
θJL
GI850
GI851
GI852
22
8.0
GI854
GI856
GI858
Unit
°C/W
Ratings and Characteristics Curves
(T
A
= 25
°C
unless otherwise noted)
8.0
T
L
= Lead Temperature
L=
0.2
5"
200
L = Lead Length
8.3
ms Single Half Sine-Wave
Average Forward Rectified Current (A)
Peak Forward Surge Current (A)
6.0
(6.
3
100
T
J
= 25 °C
Non-Repetitive
mm
)
4.0
L = 0.375" (9.5mm)
Lead Length
0.8 x 0.8 x 0.40"
(20 x 20 x 1mm)
Copper Heatsinks
T
J
= 150 °C
2.0
T
A
= Ambient Temperature
0.375" (9.5mm) Lead Length
T
J
= 25 °C
Repetitive
T
J
= 150 °C
0
30
50
70
90
110
130
150
170
10
1
10
100
Temperature (°C)
Number
of Cycles at 60 Hz
Figure 1. Forward Current Derating Curves
Figure 2. Maximum Peak Forward Surge Current
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Document Number 88630
10-Oct-05
GI850 thru GI858
Vishay General Semiconductor
100
100
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50mVp-p
Instantaneous Forward Current (A)
10
1
T
J
= 25 °C
Pulse
Width
= 300
µs
1% Duty Cycle
0.1
Junction Capacitance (pF)
10
1.8
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1
10
100
Instantaneous Forward
Voltage
(V)
Reverse
Voltage
(V)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 5. Typical Junction Capacitance
10
Instantaneous Reverse Current (µA)
T
J
= 100 °C
1
T
J
= 50 °C
0.1
T
J
= 25 °C
0.01
0
20
40
60
80
100
Percent of Rated Peak Reverse
Voltage
(%)
Figure 4. Typical Reverse Characteristics
Package outline dimensions in inches (millimeters)
DO-201AD
1.0 (25.4)
Min.
0.210 (5.3)
0.190 (4.8)
Dia.
0.375 (9.5)
0.285 (7.2)
1.0 (25.4)
Min.
0.052 (1.32)
0.048 (1.22)
Dia.
Document Number 88630
10-Oct-05
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Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
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