HB56UW464EJN-6B datasheet, PDF

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HB56UW464EJN-6B: DescriptionEDO DRAM Module, 4MX64, 60ns, MOS; Categorystorage storage; File Size308KB，27 Pages; ManufacturerHitachi （Renesas ）; Websitehttp://www.renesas.com/eng/

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HB56UW464EJN-6B Overview

EDO DRAM Module, 4MX64, 60ns, MOS

HB56UW464EJN-6B Parametric

Parameter Name	Attribute value
Maker	Hitachi （Renesas ）
package instruction	DIMM, DIMM168
Reach Compliance Code	unknown
ECCN code	EAR99
access mode	FAST PAGE WITH EDO
Maximum access time	60 ns
Other features	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O type	COMMON
JESD-30 code	R-XDMA-N168
memory density	268435456 bit
Memory IC Type	EDO DRAM MODULE
memory width	64
Number of functions	1
Number of ports	1
Number of terminals	168
word count	4194304 words
character code	4000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	4MX64
Output characteristics	3-STATE
Package body material	UNSPECIFIED
encapsulated code	DIMM
Encapsulate equivalent code	DIMM168
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
power supply	3.3 V
Certification status	Not Qualified
refresh cycle	4096
self refresh	NO
Maximum standby current	0.016 A
Maximum slew rate	1.6 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	NO
technology	MOS
Temperature level	COMMERCIAL
Terminal form	NO LEAD
Terminal pitch	1.27 mm
Terminal location	DUAL

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HB56UW464EJN-6B/7B

4,194,304-word

64-bit High Density Dynamic RAM Module

168-pin JEDEC Standard Outline Unbufferd 8 byte DIMM

ADE-203-594(Z)

Preliminary- Rev. 0.0

May. 15, 1996

Description

The HB56UW464EJN belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been

developed as an optimized main memory solution for 4 and 8 Byte processor applications.

The HB56UW464EJN is a 4M

64 dynamic RAM module, mounted 16 pieces of 16-Mbit DRAM

(HM51W16405BJ) sealed in SOJ package and 1 piece of serial EEPROM (24C02) for Presence Detect

(PD). The HB56UW464EJN offers Extended Data Out (EDO) Page Mode as a high speed access mode.

An outline of the HB56UW464EJN is 168-pin socket type package (dual lead out). Therefore, the

HB56UW464EJN makes high density mounting possible without surface mount technology. The

HB56UW464EJN provides common data inputs and outputs. Decoupling capacitors are mounted beneath

each SOJ on the module board.

Features

•

168-pin socket type package (Dual lead out)



Lead pitch: 1.27 mm

•

Single 3.3V (±10%) supply

•

High speed



Access time: t

RAC

= 60/70 ns (max)



Access time: t

CAC

= 15/18 ns (max)

•

Low power dissipation



Active mode: 4.6/4.1 W (max)



Standby mode (TTL): 116 mW (max)



Standby mode (CMOS): 58 mW (max)

•

EDO page mode capability

•

4,096 refresh cycle: 64 ms

•

3 variations of refresh



RAS-only

refresh



CAS-before-RAS

refresh



Hidden refresh

HB56UW464EJN-6B Related Products

	HB56UW464EJN-6B	HB56UW464EJN-7B
Description	EDO DRAM Module, 4MX64, 60ns, MOS	EDO DRAM Module, 4MX64, 70ns, MOS
Maker	Hitachi （Renesas ）	Hitachi （Renesas ）
package instruction	DIMM, DIMM168	DIMM, DIMM168
Reach Compliance Code	unknown	unknown
ECCN code	EAR99	EAR99
access mode	FAST PAGE WITH EDO	FAST PAGE WITH EDO
Maximum access time	60 ns	70 ns
Other features	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O type	COMMON	COMMON
JESD-30 code	R-XDMA-N168	R-XDMA-N168
memory density	268435456 bit	268435456 bit
Memory IC Type	EDO DRAM MODULE	EDO DRAM MODULE
memory width	64	64
Number of functions	1	1
Number of ports	1	1
Number of terminals	168	168
word count	4194304 words	4194304 words
character code	4000000	4000000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	70 °C	70 °C
organize	4MX64	4MX64
Output characteristics	3-STATE	3-STATE
Package body material	UNSPECIFIED	UNSPECIFIED
encapsulated code	DIMM	DIMM
Encapsulate equivalent code	DIMM168	DIMM168
Package shape	RECTANGULAR	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
power supply	3.3 V	3.3 V
Certification status	Not Qualified	Not Qualified
refresh cycle	4096	4096
self refresh	NO	NO
Maximum standby current	0.016 A	0.016 A
Maximum slew rate	1.6 mA	1.44 mA
Maximum supply voltage (Vsup)	3.6 V	3.6 V
Minimum supply voltage (Vsup)	3 V	3 V
Nominal supply voltage (Vsup)	3.3 V	3.3 V
surface mount	NO	NO
technology	MOS	MOS
Temperature level	COMMERCIAL	COMMERCIAL
Terminal form	NO LEAD	NO LEAD
Terminal pitch	1.27 mm	1.27 mm
Terminal location	DUAL	DUAL

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