ABL9001-852 datasheet, PDF - EEWORLD Datasheet

ABL9001-852: DescriptionMixer Diode, Low Barrier, X Band, 6.5dB Noise Figure, Silicon,; CategoryDiscrete semiconductor diode; File Size311KB，6 Pages; ManufacturerAdvanced Semiconductor, Inc.

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ABL9001-852 Overview

Mixer Diode, Low Barrier, X Band, 6.5dB Noise Figure, Silicon,

Parameter Name	Attribute value
Maker	Advanced Semiconductor, Inc.
package instruction	S-XXMW-F3
Reach Compliance Code	unknown
ECCN code	EAR99
Configuration	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Maximum diode capacitance	0.3 pF
Diode component materials	SILICON
Diode type	MIXER DIODE
frequency band	X BAND
JESD-30 code	S-XXMW-F3
maximum noise index	6.5 dB
Number of components	2
Number of terminals	3
Package body material	UNSPECIFIED
Package shape	SQUARE
Package form	MICROWAVE
Pulse input maximum power	0.075 W
Certification status	Not Qualified
surface mount	YES
technology	SCHOTTKY
Terminal form	FLAT
Terminal location	UNSPECIFIED
Schottky barrier type	LOW BARRIER

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