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MT47H64M8BN-25ELIT:D

Description
DDR DRAM, 64MX8, 0.4ns, CMOS, PBGA84, 10 X 12.5 MM, ROHS COMPLIANT, FBGA-84
Categorystorage    storage   
File Size8MB,133 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
Environmental Compliance
Download Datasheet Parametric View All

MT47H64M8BN-25ELIT:D Overview

DDR DRAM, 64MX8, 0.4ns, CMOS, PBGA84, 10 X 12.5 MM, ROHS COMPLIANT, FBGA-84

MT47H64M8BN-25ELIT:D Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerMicron Technology
Parts packaging codeBGA
package instructionTFBGA,
Contacts84
Reach Compliance Codecompliant
ECCN codeEAR99
access modeFOUR BANK PAGE BURST
Maximum access time0.4 ns
Other featuresAUTO/SELF REFRESH
JESD-30 codeR-PBGA-B84
JESD-609 codee1
length12.5 mm
memory density536870912 bit
Memory IC TypeDDR DRAM
memory width8
Number of functions1
Number of ports1
Number of terminals84
word count67108864 words
character code64000000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize64MX8
Package body materialPLASTIC/EPOXY
encapsulated codeTFBGA
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
Maximum seat height1.2 mm
self refreshYES
Maximum supply voltage (Vsup)1.9 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperature30
width10 mm
512Mb: x4, x8, x16 DDR2 SDRAM
Features
DDR2 SDRAM
MT47H128M4 – 32 Meg x 4 x 4 banks
MT47H64M8 – 16 Meg x 8 x 4 banks
MT47H32M16 – 8 Meg x 16 x 4 banks
For the latest data sheet, refer to Micron’s Web site:
http://www.micron.com/ddr2
Features
RoHS compliant
V
DD
= +1.8V ±0.1V, V
DD
Q = +1.8V ±0.1V
JEDEC standard 1.8V I/O (SSTL_18-compatible)
Differential data strobe (DQS, DQS#) option
4-bit prefetch architecture
Duplicate output strobe (RDQS) option for x8
DLL to align DQ and DQS transitions with CK
4 internal banks for concurrent operation
Programmable CAS latency (CL)
Posted CAS additive latency (AL)
WRITE latency = READ latency – 1
t
CK
Programmable burst lengths: 4 or 8
Adjustable data-output drive strength
64ms, 8,192-cycle refresh
On-die termination (ODT)
Industrial temperature (IT) option
Supports JEDEC clock jitter specification
Options
• Configuration
128 Meg x 4 (32 Meg x 4 x 4 banks)
64 Meg x 8 (16 Meg x 8 x 4 banks)
32 Meg x 16 (8 Meg x 16 x 4 banks)
• FBGA package (lead-free)
84-ball FBGA (12mm x 12.5mm) (:B)
(10mm x 12.5mm) (:D)
60-ball FBGA (12mm x 10mm) (:B)
(10mm x 10mm) (:D)
• Timing – cycle time
5.0ns @ CL = 3 (DDR2-400)
3.75ns @ CL = 4 (DDR2-533)
3.0ns @ CL = 5 (DDR2-667)
3.0ns @ CL = 4 (DDR2-667)
2.5ns @ CL = 6 (DDR2-800)
2.5ns @ CL = 5 (DDR2-800)
• Self refresh
Standard
Low-power
• Operating temperature
Commercial (0°C
T
C
85°C)
Industrial (–40°C
T
C
95°C; –40°C
T
A
85°C)
• Revision
Marking
128M4
64M8
32M16
CC
BN
CB
B6
-5E
-37E
-3
-3E
-25
-25E
None
L
None
IT
:A/:B/:D
Table 1:
Architecture
Configuration Addressing
128 Meg x 4 64 Meg x 8 32 Meg x 16
16 Meg x 8 x
4 banks
8K
16K (A0–A13)
4 (BA0–BA1)
1K (A0–A9)
8 Meg x 16 x
4 banks
8K
8K (A0–A12)
4 (BA0–BA1)
1K (A0–A9)
Table 2:
Key Timing Parameters
t
RC
Configuration 32 Meg x 4 x 4
banks
8K
Refresh Count
16K (A0–A13)
Row Addr.
4 (BA0–BA1)
Bank Addr.
Column Addr. 2K (A0–A9, A11)
Data Rate (MHz)
t
RCD
t
RP
Speed
Grade CL = 3 CL = 4 CL = 5 CL = 6 (ns) (ns)
-5E
-37E
-3
-3E
-25
-25E
400
400
400
N/A
N/A
N/A
400
533
533
667
N/A
533
N/A
N/A
667
667
667
800
N/A
N/A
N/A
N/A
800
N/A
15
15
15
12
15
12.5
15
15
15
12
15
12.5
(ns)
55
55
55
54
55
55
Note: CL = CAS latency.
PDF: 09005aef8117c18e/Source: 09005aef8211b2e6
512MbDDR2_1.fm - Rev. K 3/06 EN
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2004 Micron Technology, Inc. All rights reserved.

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