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UF1001FCT_T0_00001

Description
Rectifier Diode, 1 Phase, 2 Element, 5A, 100V V(RRM), Silicon, TO-220AB, ITO-220AB, 3 PIN
CategoryDiscrete semiconductor    diode   
File Size104KB,4 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/
Environmental Compliance

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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UF1001FCT_T0_00001 Overview

Rectifier Diode, 1 Phase, 2 Element, 5A, 100V V(RRM), Silicon, TO-220AB, ITO-220AB, 3 PIN

UF1001FCT_T0_00001 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionITO-220AB, 3 PIN
Reach Compliance Codenot_compliant
ECCN codeEAR99
Other featuresLOW POWER LOSS
applicationEFFICIENCY
Shell connectionISOLATED
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1 V
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Maximum non-repetitive peak forward current125 A
Number of components2
Phase1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current5 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage100 V
Maximum reverse current1 µA
Maximum reverse recovery time0.05 µs
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1

UF1001FCT_T0_00001 Preview

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UF1000FCT~UF1006FCT
ULTRAFAST RECOVERY RECTIFIERS
VOLTAGE
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O utilizing
Flame Retardant Epoxy Molding Compound.
• Exceeds environmental standards of
MIL-S-19500/228
• Low power loss, high efficiency.
• Low forwrd voltge, high current capability
• High surge capacity.
• Ultra fast recovery time, high voltage.
Lead free in comply with EU RoHS 2002/95/EC directives
50 to 600 Volts
CURRENT
10.0 Amperes
MECHANCALDATA
• Case: ITO-220AB full molded plastic package
• Terminals: Lead solderable per MIL-STD-750, Method 2026
• Polarity: As marked.
• Standard packaging: Any
• Weight: 0.0655 ounces, 1.859 grams.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PA RA M E TE R
M a xi m um R e c ur r e nt P e a k R e ve r s e V o l t a g e
M a xi m um R M S V o l t a g e
M a xi m um D C B l o c k i ng V o l t a g e
M a xi m um A ve r a g e F o r w a r d C ur r e nt a t T
C
= 1 0 0
O
C
P e a k F o r w a r d S ur g e C ur r e nt : 8 . 3 m s s i ng l e ha l f s i ne -
w a ve s up e r i m p o s e d o n r a t e d l o a d ( J E D E C m e t ho d )
M a xi m um F o r w a r d V o l t a g e a t 5 . 0 A
M a xi m um D C R e ve r s e C ur r e nt T
J
= 2 5
O
C
a t R a t e d D C B l o c k i ng V o l t a g e T
J
= 1 2 5
O
C
Ty p i c a l J u n c t i o n C a p a c i t a n c e ( N o t e 1 )
M a x i m u m R e v e r s e R e c o v e r y Ti m e ( N o t e 2 )
Ty p i c a l T h e r m a l R e s i s t a n c e ( N o t e 3 )
O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e
S YM B O L
U F 1 0 0 0 F C T U F 1 0 0 1 F C T U F 1 0 0 2 F C T U F 1 0 0 3 F C T U F 1 0 0 4 F C T U F 1 0 0 6 F C T
U N I T S
V
RRM
V
RMS
V
D C
I
F ( A V )
I
F S M
V
F
I
R
C
J
t
rr
R
θ
J C
T
J
, T
S T G
60
50
2
-5 5 to +1 5 0
1 .0
1 .0
500
40
100
O
50
35
50
100
70
100
200
140
200
10
125
300
210
300
400
280
400
600
420
600
V
V
V
A
A
1 .3 0
1 .7 0
V
µA
pF
ns
C / W
O
C
NOTES:
1. Measured at 1 MHz and applied reverse voltage of 4.0 VDC.
2. Reverse Recovery Test Conditions: I
F
=.5A, I
R
=1A, Irr=.25A.
3. Thermal resistance from Junction to case.
4. Both Bonding and Chip structure are available.
STAD-MAR.05.2009
PAGE . 1
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