HB56D836BR-7L datasheet, PDF - EEWORLD Datasheet

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HB56D836BR-7L: DescriptionFast Page DRAM Module, 8MX36, 70ns, CMOS, SIMM-72; Categorystorage storage; File Size310KB，24 Pages; ManufacturerHitachi （Renesas ）; Websitehttp://www.renesas.com/eng/

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HB56D836BR-7L Overview

Fast Page DRAM Module, 8MX36, 70ns, CMOS, SIMM-72

HB56D836BR-7L Parametric

Parameter Name	Attribute value
Maker	Hitachi （Renesas ）
Parts packaging code	SIMM
package instruction	SIMM, SSIM72
Contacts	72
Reach Compliance Code	unknown
ECCN code	EAR99
access mode	FAST PAGE
Maximum access time	70 ns
Other features	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O type	COMMON
JESD-30 code	R-XSMA-N72
memory density	301989888 bit
Memory IC Type	FAST PAGE DRAM MODULE
memory width	36
Number of functions	1
Number of ports	1
Number of terminals	72
word count	8388608 words
character code	8000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	8MX36
Output characteristics	3-STATE
Package body material	UNSPECIFIED
encapsulated code	SIMM
Encapsulate equivalent code	SSIM72
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
power supply	5 V
Certification status	Not Qualified
refresh cycle	2048
Maximum seat height	31.75 mm
self refresh	NO
Maximum standby current	0.0032 A
Maximum slew rate	1.1 mA
Maximum supply voltage (Vsup)	5.25 V
Minimum supply voltage (Vsup)	4.75 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	NO LEAD
Terminal pitch	1.27 mm
Terminal location	SINGLE

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HB56D836BR/SBR Series,

HB56D436BR/SBR Series

8,388,608-word

36-bit High Density Dynamic RAM Module

4,194,304-word

36-bit High Density Dynamic RAM Module

ADE-203-729A (Z)

Rev.1.0

Feb. 20, 1997

Description

The HB56D836BR/SBR is a 8M

36 dynamic RAM module, mounted 16 pieces of 16-Mbit DRAM

(HM5117400) sealed in SOJ package and 8 pieces of 4-Mbit DRAM (HM514100) sealed in SOJ package.

The HB56D436BR/SBR is a 4M

36 dynamic RAM module, mounted 8 pieces of 16-Mbit DRAM

(HM5117400) sealed in SOJ package and 4 pieces of 4-Mbit DRAM (HM514100) sealed in SOJ package.

An outline of the HB56D836BR/SBR, HB56D436BR/SBR is 72-pin single in-line package. Therefore, the

HB56D836BR/SBR, HB56D436BR/SBR make high density mounting possible without surface mount

technology. The HB56D836BR/SBR, HB56D436BR/SBR provide common data inputs and outputs.

Decoupling capacitors are mounted on the module board.

Features

•

72-pin single in-line package



Outline: 107.95 mm (Length)

31.75/25.40 mm (Height)

9.14 mm (Thickness)



Lead pitch: 1.27 mm

•

Single 5 V (±5%) supply

•

High speed



Access time: t

RAC

= 60/70ns (max)

•

Low power dissipation



Active mode: 6.41/5.78 W (max) (HB56D836BR/SBR Series)

6.09/5.46 W (max) (HB56D436BR/SBR Series)



Standby mode (TTL): 252 mW (max) (HB56D836BR/SBR Series)

(TTL): 126 mW (max) (HB56D436BR/SBR Series)

(CMOS): 16.8 mW (max) (L-version) (HB56D836BR/SBR Series)

(CMOS): 8.4 mW (max) (L-version) (HB56D436BR/SBR Series)

•

Fast page mode capability

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