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K4D26323QV-VC2A0

Description
DDR DRAM, 4MX32, 0.55ns, CMOS, PBGA144, LEAD FREE, FBGA-144
Categorystorage    storage   
File Size315KB,18 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Environmental Compliance  
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K4D26323QV-VC2A0 Overview

DDR DRAM, 4MX32, 0.55ns, CMOS, PBGA144, LEAD FREE, FBGA-144

K4D26323QV-VC2A0 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
MakerSAMSUNG
Parts packaging codeBGA
package instructionLFBGA,
Contacts144
Reach Compliance Codecompliant
ECCN codeEAR99
access modeFOUR BANK PAGE BURST
Maximum access time0.55 ns
Other featuresAUTO/SELF REFRESH
JESD-30 codeS-PBGA-B144
length12 mm
memory density134217728 bit
Memory IC TypeDDR DRAM
memory width32
Number of functions1
Number of ports1
Number of terminals144
word count4194304 words
character code4000000
Operating modeSYNCHRONOUS
Maximum operating temperature65 °C
Minimum operating temperature
organize4MX32
Package body materialPLASTIC/EPOXY
encapsulated codeLFBGA
Package shapeSQUARE
Package formGRID ARRAY, LOW PROFILE, FINE PITCH
Certification statusNot Qualified
Maximum seat height1.4 mm
self refreshYES
Maximum supply voltage (Vsup)2.1 V
Minimum supply voltage (Vsup)1.9 V
Nominal supply voltage (Vsup)2 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
width12 mm
K4D26323QG-GC
128M GDDR SDRAM
128Mbit GDDR SDRAM
1M x 32Bit x 4 Banks
Graphic Double Data Rate
Synchronous DRAM
with Bi-directional Data Strobe and DLL
(144-Ball FBGA)
Revision 1.0
June 2004
Samsung Electronics reserves the right to change products or specification without notice.
- 1 -
Rev 1.0(June 2004)

K4D26323QV-VC2A0 Related Products

K4D26323QV-VC2A0 K4D26323QG-GC200 K4D26323QV-VC250 K4D26323QV-VC330 K4D26323QV-VC220 K4D26323QV-VC200
Description DDR DRAM, 4MX32, 0.55ns, CMOS, PBGA144, LEAD FREE, FBGA-144 DDR DRAM, 4MX32, 0.35ns, CMOS, PBGA144, FBGA-144 DDR DRAM, 4MX32, 0.45ns, CMOS, PBGA144, LEAD FREE, FBGA-144 DDR DRAM, 4MX32, 0.55ns, CMOS, PBGA144, LEAD FREE, FBGA-144 DDR DRAM, 4MX32, 0.45ns, CMOS, PBGA144, LEAD FREE, FBGA-144 DDR DRAM, 4MX32, 0.35ns, CMOS, PBGA144, LEAD FREE, FBGA-144
Maker SAMSUNG SAMSUNG SAMSUNG SAMSUNG SAMSUNG SAMSUNG
Parts packaging code BGA BGA BGA BGA BGA BGA
package instruction LFBGA, LFBGA, LFBGA, LFBGA, LFBGA, LFBGA,
Contacts 144 144 144 144 144 144
Reach Compliance Code compliant compliant compliant compliant compliant compliant
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
access mode FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST
Maximum access time 0.55 ns 0.35 ns 0.45 ns 0.55 ns 0.45 ns 0.35 ns
Other features AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH
JESD-30 code S-PBGA-B144 S-PBGA-B144 S-PBGA-B144 S-PBGA-B144 S-PBGA-B144 S-PBGA-B144
length 12 mm 12 mm 12 mm 12 mm 12 mm 12 mm
memory density 134217728 bit 134217728 bit 134217728 bit 134217728 bit 134217728 bit 134217728 bit
Memory IC Type DDR DRAM DDR DRAM DDR DRAM DDR DRAM DDR DRAM DDR DRAM
memory width 32 32 32 32 32 32
Number of functions 1 1 1 1 1 1
Number of ports 1 1 1 1 1 1
Number of terminals 144 144 144 144 144 144
word count 4194304 words 4194304 words 4194304 words 4194304 words 4194304 words 4194304 words
character code 4000000 4000000 4000000 4000000 4000000 4000000
Operating mode SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
Maximum operating temperature 65 °C 65 °C 65 °C 65 °C 65 °C 65 °C
organize 4MX32 4MX32 4MX32 4MX32 4MX32 4MX32
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code LFBGA LFBGA LFBGA LFBGA LFBGA LFBGA
Package shape SQUARE SQUARE SQUARE SQUARE SQUARE SQUARE
Package form GRID ARRAY, LOW PROFILE, FINE PITCH GRID ARRAY, LOW PROFILE, FINE PITCH GRID ARRAY, LOW PROFILE, FINE PITCH GRID ARRAY, LOW PROFILE, FINE PITCH GRID ARRAY, LOW PROFILE, FINE PITCH GRID ARRAY, LOW PROFILE, FINE PITCH
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum seat height 1.4 mm 1.4 mm 1.4 mm 1.4 mm 1.4 mm 1.4 mm
self refresh YES YES YES YES YES YES
Maximum supply voltage (Vsup) 2.1 V 1.9 V 2.1 V 2.1 V 2.1 V 2.1 V
Minimum supply voltage (Vsup) 1.9 V 1.7 V 1.9 V 1.9 V 1.9 V 1.9 V
Nominal supply voltage (Vsup) 2 V 1.8 V 2 V 2 V 2 V 2 V
surface mount YES YES YES YES YES YES
technology CMOS CMOS CMOS CMOS CMOS CMOS
Temperature level COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
Terminal form BALL BALL BALL BALL BALL BALL
Terminal pitch 0.8 mm 0.8 mm 0.8 mm 0.8 mm 0.8 mm 0.8 mm
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
width 12 mm 12 mm 12 mm 12 mm 12 mm 12 mm
Is it lead-free? Lead free - Lead free Lead free Lead free Lead free
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